A schematic of the MQW structures.
PL spectrum at 10 K of a MQW grown on (111) Si.
Temperature-dependent PL spectra of the same sample studied in Fig. 2.
Integrated intensities of LE emissions as a function of reciprocal temperature.
PL spectra at 10 K of MQWs with well layer thicknesses of , 3, and 2 nm.
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