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Photoresponsive characteristics and hysteresis of soluble 6,13-bis(triisopropyl-silylethynyl)-pentacene-based organic thin film transistors with and without annealing
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10.1063/1.3277025
/content/aip/journal/jap/107/3/10.1063/1.3277025
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/3/10.1063/1.3277025
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Comparison of the hysteresis curves of TIPS-pentacene-based OTFT devices under dark and light conditions at . Inset: Schematic of the chemical structure of TIPS-pentacene.

Image of FIG. 2.
FIG. 2.

(a) time characteristics for memory operation processes in terms of writing, reading (on-state), erasing, and reading (off-state) for the annealed TIPS-pentacene-based OTFT devices at . Step ①: Writing ( , light ) for the on-state. Step ②: On-state reading . Step ③: Erasing for the off-state. Step ④: Off-state reading . [(b) and (c)] Schematic illustrations for the explanation of memory operations with and without the irradiation of light, respectively, for TIPS-pentacene-based OTFTs. The symbols ①, ②, ③, and ④ correspond to the steps in Figs. 2(a)–2(c) .

Image of FIG. 3.
FIG. 3.

(a) curves of the annealed TIPS-pentacene-based OTFTs, without gate bias, after application of along with the irradiation of light. Inset: curves without a prior . (b) characteristic curves of the annealed TIPS-pentacene-based OTFTs, measured at in the dark condition, after the application of a programming gate bias ( , −20, 0, 20, and 40 V) under dark (solid markers) and light ( with open markers) conditions for 5 min.

Image of FIG. 4.
FIG. 4.

Trapped charge electron density and threshold voltage shift as a function of under dark (closed markers) and light ( with open markers) conditions. was obtained from the characteristic curves of the annealed TIPS-pentacene-based OTFTs.

Image of FIG. 5.
FIG. 5.

SEM images of HMDS-treated, TIPS-pentacene-based OTFT devices: (a) without an annealing process and (b) with an annealing process ( in vacuum for 24 h). Inset: Magnification of the SEM image of the annealed device. (c) X-ray reflectivity curves of spin-casted TIPS-pentacene thin films on layer before and after annealing process.

Image of FIG. 6.
FIG. 6.

(a) Comparison of the hysteresis curves of HMDS-treated, TIPS-pentacene-based OTFTs without an annealing process under dark and light conditions at . (b) time characteristics for memory operation processes in terms of writing, reading (on-state), erasing, and reading (off-state) for HMDS-treated, TIPS-pentacene-based OTFT devices without an annealing process at . Step ①: Writing ( , light ) for the on-state. Step ②: On-state reading . Step ③: Erasing for the off-state. Step ④: Off-state reading .

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/content/aip/journal/jap/107/3/10.1063/1.3277025
2010-02-03
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoresponsive characteristics and hysteresis of soluble 6,13-bis(triisopropyl-silylethynyl)-pentacene-based organic thin film transistors with and without annealing
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/3/10.1063/1.3277025
10.1063/1.3277025
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