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Schematic representation of a MODFET device using ultrathin highly doped layers grown on pseudosubstrate on insulator.
Schematic representation of the structures fabricated. They consist of LT defective layers ; relaxed buffer layer; Sb delta-submonolayer embedded in and capped with an amorphous layer grown at room temperature.
TEM cross-section view of a tensily strained structure realized with and . (a) gives an overall view of the full structure; (b) is an enlargement of the Sb submonolayer incorporated in indicated by the arrow; and (c) shows the large dislocation density in the LT defective layer.
HRXRD reciprocal space maps around (004) and (224) reflections of layers (left and right, respectively) epitaxially grown on buffer layers: [(a) and (b)] (compressive strain); [(c) and (d)] (no strain); and [(e) and (f)] (tensile strain).
Evolution of strain measured by HRXRD in layers as a function of Ge concentration (y) of the underlying buffer layer.
Typical examples of Sb depth profiles obtained for layers with under different strain conditions: compression, small compression called “relaxed” on the figures to distinguish this situation from the fully compressive state and tension.
Evolution of segregation coefficient with (a) Ge concentration and (b) strain state.
Example of Sb depth profile obtained for layer deposited at on relaxed buffer layer.
The experimental parameters of the set of realized samples.
Perpendicular strain measured from HRDX for three samples with a Si0.85Ge0.15 active layer. The first sample called tensile has x<y, the second sample called relaxed has x=y and the third sample called compressive has x<y.
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