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Strain engineered segregation regimes for the fabrication of thin layers with abrupt n-type doping
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10.1063/1.3279597
/content/aip/journal/jap/107/3/10.1063/1.3279597
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/3/10.1063/1.3279597

Figures

Image of FIG. 1.
FIG. 1.

Schematic representation of a MODFET device using ultrathin highly doped layers grown on pseudosubstrate on insulator.

Image of FIG. 2.
FIG. 2.

Schematic representation of the structures fabricated. They consist of LT defective layers ; relaxed buffer layer; Sb delta-submonolayer embedded in and capped with an amorphous layer grown at room temperature.

Image of FIG. 3.
FIG. 3.

TEM cross-section view of a tensily strained structure realized with and . (a) gives an overall view of the full structure; (b) is an enlargement of the Sb submonolayer incorporated in indicated by the arrow; and (c) shows the large dislocation density in the LT defective layer.

Image of FIG. 4.
FIG. 4.

HRXRD reciprocal space maps around (004) and (224) reflections of layers (left and right, respectively) epitaxially grown on buffer layers: [(a) and (b)] (compressive strain); [(c) and (d)] (no strain); and [(e) and (f)] (tensile strain).

Image of FIG. 5.
FIG. 5.

Evolution of strain measured by HRXRD in layers as a function of Ge concentration (y) of the underlying buffer layer.

Image of FIG. 6.
FIG. 6.

Typical examples of Sb depth profiles obtained for layers with under different strain conditions: compression, small compression called “relaxed” on the figures to distinguish this situation from the fully compressive state and tension.

Image of FIG. 7.
FIG. 7.

Evolution of segregation coefficient with (a) Ge concentration and (b) strain state.

Image of FIG. 8.
FIG. 8.

Example of Sb depth profile obtained for layer deposited at on relaxed buffer layer.

Tables

Generic image for table
Table I.

The experimental parameters of the set of realized samples.

Generic image for table
Table II.

Perpendicular strain measured from HRDX for three samples with a Si0.85Ge0.15 active layer. The first sample called tensile has x<y, the second sample called relaxed has x=y and the third sample called compressive has x<y.

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/content/aip/journal/jap/107/3/10.1063/1.3279597
2010-02-08
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strain engineered segregation regimes for the fabrication of thin Si1−xGex layers with abrupt n-type doping
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/3/10.1063/1.3279597
10.1063/1.3279597
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