(a) Cole–Cole plot recorded for the as-grown i-NCD film at (b) similar data recorded at higher temperatures, and (c) measurements on the same film recorded at room temperature for (i) as-grown and (ii) after several heat cycles to , and (d) impedance measurements for an NCD sample carried out at for (i) as-grown and (ii) after several heat cycles between room temperature and when the film was held under vacuum conditions. The semicircular fitting used throughout is shown in Fig. 2(a).
(a) Impedance data plotted as a function of applied frequency for a i-NCD that has been oxidized in air at for one hour (b) Arrhenius plot for the thermally activated conduction process seen in this film at temperatures above . and (c) dielectric loss for the i-NCD film at room temperature following the annealing process in air.
(a) Cole–Cole plots for B-NCD films plotted as a function of measurement temperature (b) similar Cole–Cole plots but now for sequential measurements at two chosen temperatures (c) Cole–Cole plots for sequential measurements at higher temperatures following film stabilization, and (d) log of film resistance determined from fitting to the higher frequency (R1) and low frequency (R2) components of the Cole–Cole plots following film stabilization, as a function of 1/T.
(a) Hall effect measurement revealing the sheet carrier density for the stabilized B-NCD films plotted as a function of 1/T (b) Calculated Hall mobility for the stabilized B-NCD films.
Resistance and capacitance values determined for GI and GB regions of the NCD films investigated here, determined by mathematical fitting to the Cole–Cole plots, as a function of film temperature.
B-NCD: The resistance and capacitance values determined for the high frequency (R1, C1) and low frequency (R2, C2) components of the Cole–Cole plots recorded at 25 and following film stabilization.
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