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Transition temperature in the growing of poly-Si/amorphous- by electron-beam evaporation
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10.1063/1.3294695
/content/aip/journal/jap/107/3/10.1063/1.3294695
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/3/10.1063/1.3294695
/content/aip/journal/jap/107/3/10.1063/1.3294695
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/content/aip/journal/jap/107/3/10.1063/1.3294695
2010-02-01
2014-10-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Transition temperature in the growing of poly-Si/amorphous-SiO2 by electron-beam evaporation
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/3/10.1063/1.3294695
10.1063/1.3294695
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