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Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition
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10.1063/1.3296127
/content/aip/journal/jap/107/3/10.1063/1.3296127
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/3/10.1063/1.3296127

Figures

Image of FIG. 1.
FIG. 1.

XPS spectra of 25-nm-thick (a) In-polar and (b) N-polar InAlN layers. The atomic compositions were 0.177 and 0.153 for In polar and N polar, respectively, and the Ga composition was less than 1% for both samples.

Image of FIG. 2.
FIG. 2.

Indium mole fraction plotted as a function of TMIn flow rate for both In-polar (black squares) and N-polar (red circles) InAlN layers.

Image of FIG. 3.
FIG. 3.

Indium mole fraction plotted vs growth temperature for (a) In-polar and (b) N-polar InAlN.

Image of FIG. 4.
FIG. 4.

Indium mole fraction plotted vs TMAl flow rate for both (a) In-polar and (b) N-polar InAlN.

Image of FIG. 5.
FIG. 5.

Indium mole fraction of N-polar InAlN plotted vs substrate misorientation angle toward the -plane.

Image of FIG. 6.
FIG. 6.

AFM images of In-polar InAlN layers grown using temperatures of (a) , (b) , and (c) . The height scale is 5 nm.

Image of FIG. 7.
FIG. 7.

AFM images of In-polar InAlN layers grown using TMAl flow rates of (a) , (b) , (c) , and (d) . The height scale for these images is 5 nm.

Image of FIG. 8.
FIG. 8.

AFM image of In-polar InAlN grown with a TMAl flow rate of plotted with a height scale of 5 nm. Spiral hillocks centered on screw dislocations are clearly visible.

Image of FIG. 9.
FIG. 9.

AFM images of In-polar InAlN layers grown using TMIn flow rates of (a) , (b) , and (c) . The height scale is 5 nm.

Image of FIG. 10.
FIG. 10.

AFM image of a -thick N-polar GaN layer grown on a vicinal sapphire substrate with a misorientation of 4° toward the -plane. This represents a typical surface morphology upon which our N-polar InAlN layers were grown. The height scale is 10 nm.

Image of FIG. 11.
FIG. 11.

AFM images of N-polar InAlN layers grown at temperatures of (a) , (b) , and (c) . The height scale is 10 nm.

Image of FIG. 12.
FIG. 12.

AFM images of In-polar InAlN layers grown using TMAl flow rates of (a) , (b) , and (c) . The height scale for these images is 10 nm.

Image of FIG. 13.
FIG. 13.

AFM images of N-polar InAlN layers grown using TMIn flow rates of (a) , (b) , and (c) . The height scale is 10 nm.

Image of FIG. 14.
FIG. 14.

AFM images of N-polar InAlN layers grown with substrate misorientations of (a) 2°, (b) 3°, (c) 4°, and (d) 5° toward the -sapphire plane (-plane of GaN). The rms roughnesses for these images are (a) 1.83 nm, (b) 2.03 nm, (c) 1.05 nm, and (d) 1.14 nm. The height scale for these images is 10 nm.

Tables

Generic image for table
Table I.

Summary of growth conditions and results for the In-polar InAlN layers investigated in this study.

Generic image for table
Table II.

Summary of growth conditions and results for N-polar InAlN layers. Note that NC and NI represent the same sample listed twice for clarity.

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/content/aip/journal/jap/107/3/10.1063/1.3296127
2010-02-03
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/3/10.1063/1.3296127
10.1063/1.3296127
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