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Electrical properties of ZnO nanowire field effect transistors with varying high- dielectric thickness
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10.1063/1.3298910
/content/aip/journal/jap/107/3/10.1063/1.3298910
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/3/10.1063/1.3298910
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) HRTEM image of dielectric layer (21.2 nm). The inset shows schematic of a MOS device structure. (b) EOT vs thickness of dielectric layer. The inset shows a series of C-V characteristics.

Image of FIG. 2.
FIG. 2.

(a) Schematic of a ZnO nanowire FET device structure. (b) Scanning electron microscopy image of a single ZnO nanowire connected between source and drain electrodes in a FET device. (c) A series of characteristics for ZnO nanowire FETs with varying dielectric thicknesses (21.2, 49.6, and 78.3 nm).

Image of FIG. 3.
FIG. 3.

(a) Leakage current density vs applied voltage through dielectric layers of different thicknesses (21.2, 49.6, and 78.3 nm) and a 12 nm layer. (b) vs 1/V plot for and 12 nm dielectric layers. Inset is a zoomed-in plot near the transition voltages (marked by arrows) from DT to FN tunneling (see text in detail).

Image of FIG. 4.
FIG. 4.

(a) characteristics for ZnO nanowire FETs with varying dielectric thicknesses at fixed . The inset shows the statistical distribution of the measured threshold voltage. (b) Transconductance and mobility of ZnO nanowire FETs with varying dielectric thicknesses.

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/content/aip/journal/jap/107/3/10.1063/1.3298910
2010-02-05
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical properties of ZnO nanowire field effect transistors with varying high-kAl2O3 dielectric thickness
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/3/10.1063/1.3298910
10.1063/1.3298910
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