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Controllable spin-polarized electrical transport in wide-band-gap oxide ferromagnetic semiconductors
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10.1063/1.3305457
/content/aip/journal/jap/107/3/10.1063/1.3305457
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/3/10.1063/1.3305457

Figures

Image of FIG. 1.
FIG. 1.

Magnetization loops and magnetoresistance measured at 5 K for (a) and (b) FMS films, respectively.

Image of FIG. 2.
FIG. 2.

Resistivity in logarithmic scale vs for , , , and oxide FMS films. A linear relationship between and in low temperature range was guided by the solid straight lines which were well described by Eq. (3) using and .

Image of FIG. 3.
FIG. 3.

Resistivity in logarithmic scale vs for , , , and oxide FMS films. A linear relationship between and was guided by the solid straight lines which were well described by Eq. (3) using and . The sample here was deposited under oxygen partial pressure ratio 0.096% for the total pressure of Ar and fixed at 1 Pa.

Image of FIG. 4.
FIG. 4.

The temperature dependence of resistivity for , , , and FMS films. Resistivity in logarithmic scale vs (a) and (b) for the same samples. A linear relationship between and was guided by the solid straight lines which were well described by Eq. (3) using (a) and (b) and . The sample here was deposited under oxygen partial pressure ratio of 0.136% for the total pressure of Ar and fixed at 1 Pa.

Image of FIG. 5.
FIG. 5.

Resistivity in logarithmic scale vs for FMS films deposited under different oxygen partial pressure ratio (a) 0% (remnant oxygen atmosphere), (b) 0.096%, and (c) 0.136%, respectively. Solid straight lines are theoretical fittings to experimental results by Eq. (3) using (a) , , , and ; (b) , , , and ; and (c) , , and , respectively.

Image of FIG. 6.
FIG. 6.

Resistivity in logarithmic scale vs for the sample measured at zero and 5 T magnetic field. Solid straight lines are theoretical fittings to experimental results by Eq. (3) with , , and , .

Tables

Generic image for table
Table I.

Detailed sample information, including composition, the thickness of TM (x) and oxide semiconductor (y) during each period, and the periods. It should be pointed out that all the samples were prepared under the remnant oxygen atmosphere, except in Fig. 3/Fig. 5(b) and Fig. 4/Fig. 5(c), which were respectively prepared under oxygen partial pressure ratio of 0.096% and 0.136% for the total pressure of Ar and fixed at 1 Pa.

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2010-02-08
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controllable spin-polarized electrical transport in wide-band-gap oxide ferromagnetic semiconductors
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/3/10.1063/1.3305457
10.1063/1.3305457
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