(a) Schematic structure of top contact OTFT used in study, (b) Molecular structure of CuPc, ,.and molecules.
Current-voltage characteristics, (a). ( -channel), (b). ( -channel), and (c). , of based OTFT ( ; W: 3 mm) on /PMMA gate dielectric.
Current-voltage characteristics. (a) ( -channel), (b) ( -channel), and (c) , of based OTFT ( ; W: 3 mm) on gate dielectric.
Transfer characteristic of CuPc based OTFT ( ; W: 3 mm) on PMMA/ gate dielectric (a) before and (b) after air exposure measured in glove box under . (c) and (d) shows transfer characteristic of based devices before, and after air exposure, respectively. Annealing of air exposed devices at (15 min) in the filled glove box results in significant recovery of electron transport shown in (d).
Transfer characteristic of CuPc based transistors ( ; W: 3 mm) having injecting contact metal (a). Au and (b) Al on gate dielectric, and (c). Au and (d). Al on PMMA/ gate dielectric.
(a) X-ray diffraction pattern and (b) AFM image of thin film deposited at room temperature on substrate.
LUMO and HOMO energy levels scheme of CuPc, , and molecules.
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