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An efficient in-plane energy level shift in InAs/InGaAsP/InP quantum dots by selective area growth
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10.1063/1.3309766
/content/aip/journal/jap/107/4/10.1063/1.3309766
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/4/10.1063/1.3309766
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

A simple diagram of mask pattern (a) and atomic force microscope images from SAGQD1 at different mask widths: (b) , (c) , and (d) . Dotted density and dotted height from the atomic force microscope images at different mask width (e).

Image of FIG. 2.
FIG. 2.

PL spectra at room temperature from QDs at the unmasked, 4, 20, and mask widths for (a) SAGQD1 and (b) SAGQD2.

Image of FIG. 3.
FIG. 3.

PL spectra at 77 K from QDs at the unmasked 4, 20, and mask widths for (a) SAGQD1 and (b) SAGQD2.

Image of FIG. 4.
FIG. 4.

PL decay curves at 77 K from QDs at the unmasked 4, 20, and mask widths for SAGQD1.

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/content/aip/journal/jap/107/4/10.1063/1.3309766
2010-02-24
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: An efficient in-plane energy level shift in InAs/InGaAsP/InP quantum dots by selective area growth
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/4/10.1063/1.3309766
10.1063/1.3309766
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