Real-time measured resistance variation during the treatment for the -thick InN sample.
(a) Calculated band diagrams and (b) electron densities as a function of depth for the as-grown InN sample with (, and above the VBM for the as-grown surface) and the treated sample, showing a reduction of the surface carrier density by . The CBM shifts upward by 0.3 eV after the treatment.
(a) spectrum for the treated InN sample, spectra of (b) as-grown and (c) treated samples, and spectra of (d) as-grown and (e) treated samples. For comparison, all spectra in this figure are normalized with respect to the maximum peak height, respectively.
Band diagrams in the near-surface region for the as-grown and treated surfaces. The total surface band bending for the treated surface includes two parts: the band bending induced by the surface states and the electron affinity change caused by the surface dipoles.
Hall effect data of the as-grown and treated InN samples.
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