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Physics and chemistry of hot-wire chemical vapor deposition from silane: Measuring and modeling the silicon epitaxy deposition rate
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10.1063/1.3298455
/content/aip/journal/jap/107/5/10.1063/1.3298455
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/5/10.1063/1.3298455
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Deposition rates of epitaxial Si (closed circles) as a function of flow for , , and (a) one W filament and (b) two W filaments. The curves in (a) show the deposition rate calculated for complete depletion [R(rad), dep; dotted line], the contribution from thermal epitaxy only [R(th), lower dotted curve], the deposition from radicals only [R(rad), solid curve], and the deposition from radicals and thermal epitaxy [, dotted-dashed curve]. The curves in (b) show the deposition rate calculated for deposition from thermal epitaxy only [R(th), dotted], the deposition from radicals only [R(rad), solid], and the deposition from radicals and thermal epitaxy [, dotted-dashed]. The deposition rates are calculated with , , and no free parameters.

Image of FIG. 2.
FIG. 2.

Deposition rates of epitaxial Si measured via RTSE as a function of flow for , , and a single W filament (closed circles). The open circles show the deposition rate measured for epitaxial Si grown with the wire off, i.e., the deposition rate from thermal decomposition of the for pressure of 2 mTorr. The curves show the deposition rate calculated for thermal epitaxy only [R(th), dotted], the deposition from radicals only [R(rad), solid], and the deposition from radicals and thermal epitaxy [, dotted-dashed]. The deposition rates are calculated with , , and no free parameters.

Image of FIG. 3.
FIG. 3.

The deposition rate of amorphous Si on an oxide-coated c-Si substrate at , as a function of the product of flow . The line is a best fit to the data, giving .

Image of FIG. 4.
FIG. 4.

(a) Deposition rates of Si thin films as a function of from 230 to (, , and single W filament). The dotted lines represent average sticking probabilities of the gas-phase precursors, based on Eq. (9) and Fig. 3 fit. (b) values as a function of for the data in (a).

Image of FIG. 5.
FIG. 5.

Deposition rates of epitaxial Si as a function of pressure for , , and a single W filament (closed circles). The curves show the deposition rate calculated for deposition from thermal epitaxy only [R(th), dotted], the deposition from radicals only [R(rad), solid], and the deposition from radicals and thermal epitaxy [, dotted-dashed]. The deposition rates are calculated with , , and no free parameters.

Image of FIG. 6.
FIG. 6.

A contour plot of the calculated deposition rate of epitaxial Si that includes both deposition from radicals and thermal decomposition of [Eq. (11)] for a single W filament using and . Individual points show the deposition rate measured under various conditions for .

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/content/aip/journal/jap/107/5/10.1063/1.3298455
2010-03-10
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Physics and chemistry of hot-wire chemical vapor deposition from silane: Measuring and modeling the silicon epitaxy deposition rate
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/5/10.1063/1.3298455
10.1063/1.3298455
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