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Hexagonal SiGe quantum dots and nanorings on Si(110)
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) AFM images of SiGe QDs on Si(110). (b) TEM images of SiGe QDs on Si(110), the {111} facet can be clearly observed. (c) Schematic of the lattice symmetry on Si(110) substrate and enlarged AFM image of one dot in (a).

Image of FIG. 2.
FIG. 2.

AFM images of 8 nm Si-capped QDs on Si(110) with (a) 0 h, (b) 3 h, (c) 6 h, and (d) 12 h in situ annealing.

Image of FIG. 3.
FIG. 3.

(a) 3D AFM image of nanoring in Fig. 2(d) and the line profile along AB segment of SiGe nanorings. (b) The dot density, ring density, and total density as a function of in situ annealing time.

Image of FIG. 4.
FIG. 4.

TEM images and schematics of outdiffusion mechanism of (a) Si-capped SiGe QDs and (b) SiGe nanorings on Si(110).

Image of FIG. 5.
FIG. 5.

The plot of Ge–Ge Raman peak position as a function of in situ annealing time for uncapped, 8 nm Si-capped QDs, and nanorings.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hexagonal SiGe quantum dots and nanorings on Si(110)