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Experimental approaches to zero-field spin splitting in a gated high-mobility quantum well structure: Weak antilocalization and beating pattern
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10.1063/1.3309786
/content/aip/journal/jap/107/5/10.1063/1.3309786
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/5/10.1063/1.3309786
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The dependence of (open circles) and (open squares) on at . Inset shows the transport field as a function of .

Image of FIG. 2.
FIG. 2.

(a) The quantum magnetoconductivity (symbols) for different gate voltages and corresponding fits using Golub’s model (solid lines). The inset shows an example with a logarithmic axis. The dashed lines are guides for the eye and illustrate that the minima in move systematically toward zero field as is made more positive. (b) The FT of the SdH oscillations (symbols) for different gate voltages and corresponding fits (solid lines). Traces in (a) and (b) have been vertically offset for clarity.

Image of FIG. 3.
FIG. 3.

The dependence of extracted from the WAL fit (open circles) and by fitting the FT traces with (open squares) and a -dependent (open triangles). The lines are guides for the eye. The inset shows the corresponding dependence of calculated from according to the Rashba model.

Image of FIG. 4.
FIG. 4.

(a) and as functions of for . The arrows mark the beating nodes. (b) The values of for (solid circles), (solid squares) Landau levels and derived by the beating nodes (open symbols) for different gate voltages. The solid line is the theoretical fit.

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/content/aip/journal/jap/107/5/10.1063/1.3309786
2010-03-04
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Experimental approaches to zero-field spin splitting in a gated high-mobility In0.53Ga0.47As/InP quantum well structure: Weak antilocalization and beating pattern
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/5/10.1063/1.3309786
10.1063/1.3309786
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