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Selective absorption enhancement in organic solar cells using light incoupling layers
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10.1063/1.3311559
/content/aip/journal/jap/107/5/10.1063/1.3311559
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/5/10.1063/1.3311559

Figures

Image of FIG. 1.
FIG. 1.

Solar cell stack: substrate, intransparent metal back electrode, hole transport layer, absorber, EBL, semitransparent metal top contact, and organic capping layer.

Image of FIG. 2.
FIG. 2.

Comparison of measured (left axis) and simulated (right axis) short-circuit current densities. Filled squares: experiment. Dotted line: guide to the eyes. Empty circles: normalized simulation data, assuming AM 1.5g illumination and 100% internal quantum efficiency. The four crosshatched boxes at 0, 60, 164, and 240 nm capping layer thickness mark four solar cell devices which are characterized in more detail, representing current/efficiency maxima and minima.

Image of FIG. 3.
FIG. 3.

Current voltage curves of OSC with different layer thicknesses, under illumination. Filled squares: 0 nm . Filled circles: 60 nm. Empty triangles: 164 nm. Filled upside-down triangles: 240 nm capping layer. Inset: current voltage curves of the same devices in the dark on a semilog scale.

Image of FIG. 4.
FIG. 4.

Plot of open circuit voltage (filled squares) and fill factor (filled circles) vs layer thickness.

Image of FIG. 5.
FIG. 5.

Plot of power conversion efficiency (filled squares) and saturation (filled circles) vs layer thickness. The lines are guide to the eyes.

Image of FIG. 6.
FIG. 6.

Top: EQE measurements of OSC with different layer thicknesses, under illumination. Bottom: calculated absorbed photon flux of OSC with different layer thicknesses, assuming AM 1.5g illumination. Filled squares: 0 nm . Filled circles: 60 nm. Empty triangles: 164 nm. Filled upside-down triangles: 240 nm capping layer.

Image of FIG. 7.
FIG. 7.

Normalized field amplitudes in the OSC stack with 0 nm (top left), 60 nm (top right), 164 nm (bottom left), and 240 nm (bottom right) layer thickness. The layers and the Al back contacts are not shown to achieve better visibility of the field in the active layers (, BHJ, and intrinsic ZnPc). The horizontal lines show major absorption peaks of (450 nm) and ZnPc (630 nm).

Image of FIG. 8.
FIG. 8.

Normalized field amplitude in an OSC with 240 nm capping layer in the complete device stack. The absorbing materials (, BHJ, and intrinsic ZnPc) are marked to show their positions.

Image of FIG. 9.
FIG. 9.

Absorbed total number of photons per unit time and unit area per nanometer, depending on the stack position. Plotted as distance from substrate (glass), omitting the 100 nm Al bottom electrode. Filled squares: 0 nm . Filled circles: 60 nm. Empty triangles: 164 nm. Filled upside-down triangles: 240 nm capping layer.

Tables

Generic image for table
Table I.

Solar cell characteristics.

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/content/aip/journal/jap/107/5/10.1063/1.3311559
2010-03-15
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Selective absorption enhancement in organic solar cells using light incoupling layers
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/5/10.1063/1.3311559
10.1063/1.3311559
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