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Influence of the matrix properties on the performances of Er-doped Si nanoclusters light emitting devices
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10.1063/1.3319581
/content/aip/journal/jap/107/5/10.1063/1.3319581
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/5/10.1063/1.3319581
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Room temperature EL spectra of devices based on Er-doped Si nc formed by thermal annealing of Er-doped layers grown by reactive (circles) and Ar (continuous line) sputtering. Both spectra are obtained with a current density of under forward bias conditions.

Image of FIG. 2.
FIG. 2.

Room temperature EL time decay at 1535 nm of devices based on Er-doped Si nc formed by thermal annealing of Er-doped layers grown by reactive (circles) and Ar sputtering (continuous line). Both decays are obtained with a current density of under forward bias conditions. The fits to the data obtained by using a stretched exponential function are also shown.

Image of FIG. 3.
FIG. 3.

Dependence of the EL intensity of devices based on active layers grown by reactive sputtering on (a) the current density and (b) the applied voltage. Data obtained under forward and reverse bias conditions are shown. In both panels the lines are drawn to guide the eye.

Image of FIG. 4.
FIG. 4.

Room temperature time resolved evolution of the 1535 nm PL signal of a device based on Er-doped Si nc grown by reactive sputtering, obtained by pumping at 488 nm and with a pump power of 10 mW. A current density of is switched on at and switched-off at . For comparison purposes, the figure also reports data obtained from a LED based on an active layer grown by PECVD.

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/content/aip/journal/jap/107/5/10.1063/1.3319581
2010-03-02
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of the matrix properties on the performances of Er-doped Si nanoclusters light emitting devices
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/5/10.1063/1.3319581
10.1063/1.3319581
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