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Influence of the surface potential on electrical properties of heterostructures with different Al-content: Effect of growth method
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10.1063/1.3319585
/content/aip/journal/jap/107/5/10.1063/1.3319585
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/5/10.1063/1.3319585
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Figures

Image of FIG. 1.
FIG. 1.

Sheet carrier concentration of undoped HEMT structures, capped with a 3 nm GaN layer, grown by MOVPE (squares) and PA-MBE (circles) on s.i. SiC substrates as a function of the Al-content in the barrier layer. The lines are calculated based on the approximation of Ambacher et al. (Ref. 19) [dashed line, see Eq. (1)] replacing the value of with (MOVPE, full line) and (PA-MBE, dotted line), respectively.

Image of FIG. 2.
FIG. 2.

Surface potential of undoped HEMT structures, capped with a 3 nm GaN layer, grown by MOVPE (full squares) and PA-MBE (circles) on s.i. SiC substrates as a function of the Al-content in the barrier layer. The standard deviation is indicated by shaded areas. PR data of selected samples are included for MOVPE (diagonal crosses) and PA-MBE (cross) grown samples. The dashed line is from the approximation of Ambacher et al. (Ref. 19) while the full line (MOVPE) and the dotted line (PA-MBE) are determined from fitting our data with Eq. (1).

Image of FIG. 3.
FIG. 3.

Threshold voltage calculated based on Eqs. (1) and (3) (dashed line) and determined by means of Eq. (4) (MOVPE: full line and PA-MBE: dotted line) as revealed from the average (see Fig. 2). Experimental data, squares (MOVPE) and circles (PA-MBE) of process control monitor transistors (average of 21 sites per wafer) are fitted (bold line, ) by means of Eq. (4). The MOVPE and PA-MBE grown samples for were processed in one process run.

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/content/aip/journal/jap/107/5/10.1063/1.3319585
2010-03-05
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of the surface potential on electrical properties of AlxGa1−xN/GaN heterostructures with different Al-content: Effect of growth method
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/5/10.1063/1.3319585
10.1063/1.3319585
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