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Influence of dopant concentration on properties of films in magnetic fields up to 30 T
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Image of FIG. 1.
FIG. 1.

A schematic drawing of the experimental setup mounted inside the solenoid in pulsed magnetic field measurements.

Image of FIG. 2.
FIG. 2.

Magnetic field dependence of determined from the hysteresis loops at 10 K. The lines are the fits to Eq. (1). The inset table shows the accommodation field values and the power-law exponents in fits to Eq. (1).

Image of FIG. 3.
FIG. 3.

Magnetic field dependence of the resistivity , measured at different temperatures for (a) undoped and the [(b)–(g)] 1, 2.6, 4, 5, 7.5, and 9 wt % BZO-doped YBCO films, respectively. The lines are fits to Eq. (2).

Image of FIG. 4.
FIG. 4.

Temperature dependence of for YBCO films doped with different BZO concentrations. The lines are to guide the eye.

Image of FIG. 5.
FIG. 5.

The field dependences of the critical current densities of the undoped and BZO-doped YBCO films at 65 K determined from the pulsed magnetic field data.

Image of FIG. 6.
FIG. 6.

Magnetic field dependence of optimal BZO concentration measured in two different field ranges. The error bars are calculated from the parabolic fits to the experimental BZO concentration dependent data, measured at different magnetic fields. The lines in the main panels are fits to exponential increase at low fields on the left and to the linear behavior on the right.


Generic image for table
Table I.

Temperature dependence of the pinning potential values calculated from the fitted and values at 15 T for the undoped (0 wt %) and BZO-doped (1–9 wt %) YBCO films.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of BaZrO3 dopant concentration on properties of YBa2Cu3O6+x films in magnetic fields up to 30 T