(a) Seebeck coefficient and electrical resistivity and (b) carrier concentration and Hall mobility of the electrically stressed Bi–Sb–Te and Sb/Bi–Sb–Te films measured at room temperature as a function of annealing temperature.
SEM images of the Bi–Sb–Te and Sb/Bi–Sb–Te films before and after electrically stressing at for 5 min, respectively. [(a) and (b)] As-deposited Bi–Sb–Te and Sb/Bi–Sb–Te and [(c) and (d)] electrically stressed Bi–Sb–Te and Sb/Bi–Sb–Te.
Experimental and theoretical Seebeck coefficients of the thermally and electrically treated Bi–Sb–Te and Sb/Bi–Sb–Te films as a function of carrier concentration.
Seebeck coefficient, electrical resistivity, carrier concentration, Hall mobility, scattering parameter, and thermoelectric power factor of the original Bi–Sb–Te and the Sb-inserted Bi–Sb–Te films electrically stressed at for 5 min, respectively.
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