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Growth, structure, and mechanical properties of hydrogenated amorphous carbon nitride films deposited by dielectric barrier discharges
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10.1063/1.3332115
/content/aip/journal/jap/107/6/10.1063/1.3332115
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/6/10.1063/1.3332115

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the vacuum chamber used for film deposition and OES studies.

Image of FIG. 2.
FIG. 2.

The cross section SEM of a typical a-C:N:H film deposited on a Si substrate at and . The film thickness is approximately 1900 nm.

Image of FIG. 3.
FIG. 3.

Deposition rates of a-C:N:H films deposited at , 3, and 5 kHz as a function of p.

Image of FIG. 4.
FIG. 4.

Representative three-dimensional AFM images of a-C:N:H films deposited at and (a), 200 Pa (b), and 1000 Pa (c).

Image of FIG. 5.
FIG. 5.

rms values of a-C:N:H films deposited at , 3, and 5 kHz as a function of p.

Image of FIG. 6.
FIG. 6.

Nanoindent two-dimensional AFM images of a-C:N:H films deposited at and (a) and 1000 Pa (b). The applied force from the diamond-tipped cantilever was .

Image of FIG. 7.
FIG. 7.

Hardness of a-C:N:H films deposited at , 3, and 5 kHz as a function of p.

Image of FIG. 8.
FIG. 8.

XPS and spectra from a-C:N:H films deposited and .

Image of FIG. 9.
FIG. 9.

FTIR spectra of a-C:N:H films deposited at and .

Image of FIG. 10.
FIG. 10.

Typical optical emission spectra of plasmas at (a) and and (b) and .

Image of FIG. 11.
FIG. 11.

Optical emission spectral intensities of (a) CN (387 nm), (b) (790 nm), and (c) NH (358 nm) as a function of p.

Image of FIG. 12.
FIG. 12.

Experimental and simulated emission spectra of second positive system. These plasmas were produced at and . The feed gas used is (a) and (b) , respectively.

Tables

Generic image for table
Table I.

Deposition conditions.

Generic image for table
Table II.

N/C ratios of a-C:N:H films deposited in DBD plasmas.

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/content/aip/journal/jap/107/6/10.1063/1.3332115
2010-03-29
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth, structure, and mechanical properties of hydrogenated amorphous carbon nitride films deposited by CH3CN dielectric barrier discharges
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/6/10.1063/1.3332115
10.1063/1.3332115
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