Scanning electron micrographs [(a), (b)] showing representative samples of the synthesized nanowires. High resolution electron microscopy (c) shows the crystallinity of the solution grown nanowires. The length and diameter statistics for a population of nanowires are also shown (d).
PDS spectra of ZnO nanowire films (● undoped, ○ 0.68 at. % Al, ◻ 1.58 at. % a Al, ◇ 2.34 at. % Al., △ 3.98 at. % Al) and the corresponding Drude model fits (solid lines). Inset: absorption coefficient vs photon energy in the band edge and sub-bandgap regions.
a) Carrier mobility calculated from SWFET measurements (○), as well as values obtained with the Drude model fits (●). (b) Concentration of aluminum atoms (○) for various doped ZnO nanowires compared to the free-carrier density calculated with the Drude model fits (●). Error bars are ± one standard deviation.
Transfer curve of an undoped ZnO nanowire FET with a drain-source voltage (inset: SEM image of the device). The SWFET devices are fabricated from typical AZO nanowires (Fig. 1).
MAS NMR spectra for Al-doped ZnO (at. % Al:Zn as labeled), collected at 14.1 T (156.5 MHz), with sample spinning rates of 20 kHz, rf tip angle (solids) of about 30° ( pulse), pulse delay of 0.1 s, and referenced to 0.1 M . The only prominent spinning sideband (spin echo) in the range plotted, identified by varying the spinning rate, is marked by “ssb.”
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