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Flat band voltage modulation by controlling compositional depth profile in nanolaminate gate oxide
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10.1063/1.3369388
/content/aip/journal/jap/107/7/10.1063/1.3369388
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/7/10.1063/1.3369388
/content/aip/journal/jap/107/7/10.1063/1.3369388
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/content/aip/journal/jap/107/7/10.1063/1.3369388
2010-04-14
2014-08-22
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Flat band voltage (VFB) modulation by controlling compositional depth profile in La2O3/HfO2 nanolaminate gate oxide
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/7/10.1063/1.3369388
10.1063/1.3369388
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