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Flat band voltage modulation by controlling compositional depth profile in nanolaminate gate oxide
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10.1063/1.3369388
/content/aip/journal/jap/107/7/10.1063/1.3369388
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/7/10.1063/1.3369388
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic drawings for three kinds of laminate profiles (H/L, H/L/H, and L/H, respectively).

Image of FIG. 2.
FIG. 2.

XPS spectra of the PE-ALD nanolaminates: (a) , (b) .

Image of FIG. 3.
FIG. 3.

Electrical properties of MOS capacitors using the PE-ALD nanolaminates as gate insulators after HTA processing at for 10 s in Ar atmosphere: (a) the C-V curves, (b) the interface state density , and leakage current density at −1 MV/cm.

Image of FIG. 4.
FIG. 4.

for the three types of the PE-ALD laminates and the after HTA processing at for 10 s in Ar atmosphere (standard sample: ).

Image of FIG. 5.
FIG. 5.

Schematic drawings for the modulation mechanism using the typical case of H/L/H sample: (a) diffusion of the La atoms from the inserted layer into the interfacial layer, (b) modulation of metal EWF from negative field by the interface dipole (Hf–O–La configuration).

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/content/aip/journal/jap/107/7/10.1063/1.3369388
2010-04-14
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Flat band voltage (VFB) modulation by controlling compositional depth profile in La2O3/HfO2 nanolaminate gate oxide
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/7/10.1063/1.3369388
10.1063/1.3369388
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