Schematic drawings for three kinds of laminate profiles (H/L, H/L/H, and L/H, respectively).
XPS spectra of the PE-ALD nanolaminates: (a) , (b) .
Electrical properties of MOS capacitors using the PE-ALD nanolaminates as gate insulators after HTA processing at for 10 s in Ar atmosphere: (a) the C-V curves, (b) the interface state density , and leakage current density at −1 MV/cm.
for the three types of the PE-ALD laminates and the after HTA processing at for 10 s in Ar atmosphere (standard sample: ).
Schematic drawings for the modulation mechanism using the typical case of H/L/H sample: (a) diffusion of the La atoms from the inserted layer into the interfacial layer, (b) modulation of metal EWF from negative field by the interface dipole (Hf–O–La configuration).
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