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Composition dependence of Si and Ge diffusion in relaxed alloys
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10.1063/1.3380853
/content/aip/journal/jap/107/7/10.1063/1.3380853
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/7/10.1063/1.3380853

Figures

Image of FIG. 1.
FIG. 1.

SIMS concentration profiles of and in the epitaxial isotope structures with and 0.70 before [(a) and (c)] and after annealing [(b) and (d)] for temperatures and times indicated in the figure. The black solid lines are best fits based on the solution of Fick’s second law of self-diffusion. For clarity only every ninth (fourth) data point are shown for Ge (Si) in (b) and (d).

Image of FIG. 2.
FIG. 2.

Temperature dependence of the diffusion coefficient of (filled squares) and (filled circles) in . For comparison the lower, second upper, and upper dashed lines show the temperature dependence of Si self-diffusion, (Refs. 19–21) Si diffusion in Ge, (Ref. 15) and Ge self-diffusion, (Ref. 22) respectively.

Image of FIG. 3.
FIG. 3.

Activation enthalpy of Si diffusion (filled squares, line) and Ge diffusion (filled circles, dashed lines) in vs the Ge content obtained from this work including data on Si self-diffusion, (Refs. 19–21) Ge self-diffusion, (Ref. 22) and Si diffusion in Ge (Ref. 15). The composition dependence of Ge diffusion in reported by McVay and DuCharme, (Refs. 9–11) Zangenberg et al., (Ref. 12) and Strohm et al. (Refs. 13 and 14) are shown for comparison.

Image of FIG. 4.
FIG. 4.

Upward bowing behavior of the activation enthalpy of Si diffusion (squares, straight line) and Ge diffusion (circles, dashed line) in as function of the Ge content . In comparison the composition dependence of the diffusion activation enthalpy of As (Ref. 23) (filled triangles-down, straight line) and Sb (Ref. 24) (triangles-up, straight line) in and of the binding energy of arsenic-vacancy (rhombs, straight line) and phosphorus-vacancy pairs (asterisks, straight line) (Refs. 25 and 26) are shown. The negative binding energy implies that the defect cluster is more stable than its constituent point defect components (Ref. 30).

Tables

Generic image for table
Table I.

Ge and Si diffusion coefficients and in with , 0.05, 0.25, 0.45, and 0.70 deduced from diffusion experiments at the temperatures and times indicated.

Generic image for table
Table II.

Activation enthalpy and pre-exponential factor of Ge and Si diffusion in with , 0.05, 0.25, 0.45, 0.70, and 1.0 determined in this work together with results given in the literature.

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/content/aip/journal/jap/107/7/10.1063/1.3380853
2010-04-16
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Composition dependence of Si and Ge diffusion in relaxed Si1−xGex alloys
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/7/10.1063/1.3380853
10.1063/1.3380853
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