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Dependence of sensitivity of biosensor for carbon nanotube field-effect transistor with top-gate structures
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10.1063/1.3298904
/content/aip/journal/jap/107/8/10.1063/1.3298904
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/8/10.1063/1.3298904

Figures

Image of FIG. 1.
FIG. 1.

Schematic structures of CNT-FET biosensor and measuring system for bio-sensing.

Image of FIG. 2.
FIG. 2.

Two-dimensional model of CNT-FET biosensor used for calculation. In this figure, thickness of metal gate was set to zero.

Image of FIG. 3.
FIG. 3.

Dependence of on structure of CNT-FET biosensor obtained from calculations. (a) Dependence on thicknesses of insulator and metal top-gate electrode. (●) and (▲) indicate the dependence of on the thicknesses of the insulator and metal top-gate electrode, respectively. (b) Dependence on relative permittivity (○).

Image of FIG. 4.
FIG. 4.

Dependence of on for CNT-FET biosensors. Plots for Sensor-20, Sensor-50, and Sensor-80 are indicated by a solid line (–––), dashed line (----), and dotted line (∙∙∙∙∙), respectively. ’s of Sensor-20, Sensor-50, and Sensor-80 are maintained at , −1.5, and , respectively.

Image of FIG. 5.
FIG. 5.

Dependence of on PSA concentration of CNT-FET biosensors. Results for Sensor-20, Sensor-50, and Sensor-80 are shown by a solid line with (▲), dotted line with (◼), and dashed line with (●), respectively. Both and are maintained at . The ’s values of Sensor-20, Sensor-50, and Sensor-80 are maintained at , –1.5, and , respectively.

Tables

Generic image for table
Table I.

Parameters of each element used in calculation. Here, shows the parameter used for determining the dependence of on insulator thickness. shows the parameter used for the detecting the dependence of on metal gate thickness. shows the parameter used for detecting the dependence of on relative permittivity.

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/content/aip/journal/jap/107/8/10.1063/1.3298904
2010-04-21
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dependence of sensitivity of biosensor for carbon nanotube field-effect transistor with top-gate structures
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/8/10.1063/1.3298904
10.1063/1.3298904
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