Electrical resistivity dependence on temperature along the  and  directions of the Ni–Mn–Ga crystal during heating as well as single-variant configuration. The inset shows the AR dependence of temperature.
Theoretical anisotropic conductivity coefficient as a function of (a) chemical potential at 300 K and (b) temperature near Fermi level for the  and  directions of Ni–Mn–Ga crystal.
Majority- and minority-spin total DOS and PDOS of Ni-Mn-Ga crystal in the near region in equilibrium (a) austenitic and (b) martensitic phases. The PDOS is multiplied by a factor of 10.
Fermi surfaces as well as the projection onto the and planes for (a) majority spin and (b) minority spin in the unit cell of tetragonal martensitic phase.
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