XRD pattern of a typical ZnO film deposited on p-Si (111) substrate. The inset shows the rocking curve corresponding to the ZnO (0002) peak.
(a) EL spectrum of the n-ZnO/p-Si heterojunction LED under different injected currents and (b) PL spectrum of the ZnO film deposited on p-Si (111) substrate. The inset shows the curve of n-ZnO/p-Si heterojunction LED.
(a) CL spectra for the ZnO thick film and the ZnO/Si interface, (b) CL spectra for the Si substrate and the ZnO/Si interface. (c) VB spectra for the ZnO thick film and the Si substrate. (d) CL spectra for the Si substrate and the ZnO/Si interface. For the CL spectra, experimental data points are fitted by Voigt (mixed Lorentzian–Gaussian) line shapes after the application of a Shirley background.
Energy band diagram of the ZnO/Si heterojunction with a interfacial layer. A type-II heterojunction is formed in the staggered arrangement.
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