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Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling
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10.1063/1.3386521
/content/aip/journal/jap/107/8/10.1063/1.3386521
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/8/10.1063/1.3386521
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Si, Ge, and InAs nanowire structure. The gate length measures 15 nm, the total nanowire length is 40 nm. The transport direction is aligned with the crystal axis.

Image of FIG. 2.
FIG. 2.

(a) Imaginary (left part) and real (right part) band dispersion of an InAs nanowire with . (b) Transfer characteristics at of an InAs nanowire TFET with calculated in the WKB approximation (solid line with triangles), including coherent tunneling only (dashed gray line), and with coherent and PAT (dashed-dotted line).

Image of FIG. 3.
FIG. 3.

Spectral current of an InAs nanowire TFET with at extracted at the source-channel interface. The results obtained in the WKB approximation (solid line), with coherent tunneling only (dashed gray line), and with coherent and PAT (dashed-dotted line) are compared. The inset shows the band diagram and the line along which the spectral currents are extracted.

Image of FIG. 4.
FIG. 4.

(a) Imaginary (left part) and real (right part) band dispersion of a Si nanowire with . The real part of the band gap dispersion is also given. For clarity, not all the bands are shown. The dashed gray line follows the band used to calculate the WKB transmission according to Eq. (2). (b) Transfer characteristics at (left axis) with PAT (, solid line) with coherent tunneling only (, dashed line), and in the WKB approximation (, line with triangles) and ratio between and (dashed-dotted line, right axis) for a Si nanowire tunneling transistor with .

Image of FIG. 5.
FIG. 5.

(a) Band diagram of the Si TFET with at and (OFF-state). (b) Energy- and position-resolved current distribution in the coherent tunneling limit corresponding to the subplot (a). (c) Same as (b) but in the presence of PAT. The same color scale is used in the subplots (b) and (c).

Image of FIG. 6.
FIG. 6.

Spectral currents at extracted at the source-channel interface of Si nanowire TFETs with (a) , (b) , (c) , and (d) . The dashed curves refer to coherent tunneling only, the solid curves to coherent and PAT.

Image of FIG. 7.
FIG. 7.

(a) Imaginary (left part) and real (right part) band dispersion of a Ge nanowire with . The real part of the band gap dispersion is also given. For clarity, not all the bands are shown. The dashed gray line represents the least action for tunneling path. (b) Transfer characteristics at (left axis) with PAT (, solid line), with coherent tunneling only (, dashed line), and in the WKB approximation (, line with triangles) and ratio between and (dashed-dotted line, right axis) for a Ge nanowire TFET with .

Image of FIG. 8.
FIG. 8.

(a) Spectral current of a Ge nanowire TFET with at and extracted at the source-channel interface. The dashed line refers to coherent tunneling only, the solid line to PAT. The position of the bands labeled , , and in Fig. 7 is indicated. (b) Same as (a) but at . The results obtained in the WKB approximation (solid line with triangles) are also shown.

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/content/aip/journal/jap/107/8/10.1063/1.3386521
2010-04-27
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/8/10.1063/1.3386521
10.1063/1.3386521
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