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Temperature dependent properties of silicon containing diamondlike carbon films prepared by plasma source ion implantation
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10.1063/1.3394002
/content/aip/journal/jap/107/8/10.1063/1.3394002
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/8/10.1063/1.3394002
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

HRTEM microstructure and selected-area electron diffraction pattern of the Si-DLC films for (a) as-deposited and (b) annealed at 873 K.

Image of FIG. 2.
FIG. 2.

Raman spectra of annealed (a) DLC, (b) Si-DLC , and (c) Si-DLC films.

Image of FIG. 3.
FIG. 3.

G position and ratio as a function of annealing temperature for (●) DLC, (▲) Si-DLC , and (◼) Si-DLC films.

Image of FIG. 4.
FIG. 4.

XPS spectra of the Si-DLC film prepared at −16 kV pulse and −2 kV dc.

Image of FIG. 5.
FIG. 5.

XPS spectra of the Si-DLC film prepared at −16 kV pulse and −2 kV dc annealed at 873 K for 30 min.

Image of FIG. 6.
FIG. 6.

XPS spectra of the Si-DLC film prepared at −16 kV pulse and −2 kV dc annealed at 873 K for 30 min.

Image of FIG. 7.
FIG. 7.

Oxygen depth as a function of annealing temperature for (○) DLC, (△) Si-DLC , and (◻) Si-DLC films.

Image of FIG. 8.
FIG. 8.

Hardness as a function of annealing temperature for (○) DLC, (△) Si-DLC , and (◻) Si-DLC films.

Image of FIG. 9.
FIG. 9.

Friction coefficient as a function of the number of rotations in the ball-on-disk tests for (a) DLC, (b) Si-DLC , and (c) Si-DLC films.

Image of FIG. 10.
FIG. 10.

Friction coefficient as a function of the number of rotations in the ball-on-disk tests for (a) DLC, (b) Si-DLC , and (c) Si-DLC films prepared at −16 kV pulse and −2 kV dc annealed at 723 K.

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/content/aip/journal/jap/107/8/10.1063/1.3394002
2010-04-28
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependent properties of silicon containing diamondlike carbon films prepared by plasma source ion implantation
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/8/10.1063/1.3394002
10.1063/1.3394002
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