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High field-sensitivity planar Hall sensor based on NiFe/Cu/IrMn trilayer structure
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10.1063/1.3337739
/content/aip/journal/jap/107/9/10.1063/1.3337739
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/9/10.1063/1.3337739
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The PHE voltage profiles of the PHE sensors using a bilayer thin film Ta(3)/NiFe(10)/IrMn(10)/Ta(3) nm, a spin-valve thin film Ta(3)/NiFe(10)/Cu(1.2)/NiFe(2)/IrMn(10)/Ta(3) nm, and a trilayer thin film Ta(3)/NiFe(10)/Cu(0.12)/IrMn(10)/Ta(3) nm.16

Image of FIG. 2.
FIG. 2.

(a) The hysteresis loop of a bilayer thin film Ta(3)/NiFe(10)/IrMn(10)/Ta(3) nm, a spin-valve thin film Ta(3)/NiFe(10)/Cu(1.2)/NiFe(2)/IrMn(10)/Ta(3) nm, and a trilayer thin film Ta(3)/NiFe(10)/Cu(0.12)/IrMn(10)/Ta(3) nm. The external magnetic field is applied parallel to the anisotropy axis of the thin films. (b) The proposed active and shunt currents model for the three investigated structures.

Image of FIG. 3.
FIG. 3.

The PHE voltage profiles of the sensor using trilayer thin films with .

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/content/aip/journal/jap/107/9/10.1063/1.3337739
2010-05-05
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High field-sensitivity planar Hall sensor based on NiFe/Cu/IrMn trilayer structure
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/9/10.1063/1.3337739
10.1063/1.3337739
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