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Postannealing effect on properties of hydrogenated amorphous Si(Mn) magnetic semiconductors
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10.1063/1.3352928
/content/aip/journal/jap/107/9/10.1063/1.3352928
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/9/10.1063/1.3352928

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of samples annealed at 373, 473, and 573 K for 20 min

Image of FIG. 2.
FIG. 2.

High-resolution TEM images of an sample annealed at (a) 473 K and (b) 573 K for 20 min. The inset shows the corresponding selected-area electron-diffraction pattern.

Image of FIG. 3.
FIG. 3.

(a) M-H curves measured at 10 K of as-deposited and postannealed samples. (b) M-T curves of as-deposited and postannealed samples, ZFC or FC under a magnetic field 0.01 T. The fitting results of FC data of postannealed and as-deposited samples are shown by the solid and dashed lines, respectively.

Image of FIG. 4.
FIG. 4.

Hall resistance, , vs magnetic field curves of an sample annealed at 473 K for 20 min measured at 100 K

Tables

Generic image for table
Table I.

Carrier concentration, electrical conductivity, and saturation magnetization of as-deposited and postannealed films.

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/content/aip/journal/jap/107/9/10.1063/1.3352928
2010-04-19
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Postannealing effect on properties of hydrogenated amorphous Si(Mn) magnetic semiconductors
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/9/10.1063/1.3352928
10.1063/1.3352928
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