XRD patterns of samples annealed at 373, 473, and 573 K for 20 min
High-resolution TEM images of an sample annealed at (a) 473 K and (b) 573 K for 20 min. The inset shows the corresponding selected-area electron-diffraction pattern.
(a) M-H curves measured at 10 K of as-deposited and postannealed samples. (b) M-T curves of as-deposited and postannealed samples, ZFC or FC under a magnetic field 0.01 T. The fitting results of FC data of postannealed and as-deposited samples are shown by the solid and dashed lines, respectively.
Hall resistance, , vs magnetic field curves of an sample annealed at 473 K for 20 min measured at 100 K
Carrier concentration, electrical conductivity, and saturation magnetization of as-deposited and postannealed films.
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