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Hysteresis switching loops in Ag-manganite memristive interfaces
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View: Figures


Image of FIG. 1.
FIG. 1.

Resistance at the contact D, measured using a bias current of , as a function of the voltage drop produced by the electrical pulse previously applied. After performing the major loops (filled symbols), minor HSLs were obtained starting at selected states marked by squares. The vertical dotted line indicates the threshold voltage for switching from H to L. Inset: multiterminal electrode configuration used for measuring the interface resistance.

Image of FIG. 2.
FIG. 2.

Resistance at the right interface as a function of the stimulus , as obtained from model simulations. Squares depict initial states for minor loops. Numbered dots indicate threshold voltages for L to H and H to L transitions in selected HSL (see text for details). Similarly to the experimental case, the threshold voltages for switching from L to H depend on the initial state. Inset: voltage protocol sequences (major loop followed by a minor loop) as a function of time steps.

Image of FIG. 3.
FIG. 3.

Panel , 2, 3, and 4: electric field profiles along the sample for different values of , close to the threshold voltages labeled in Fig. 2 as no. 1, 2, 3, and 4, respectively. The inset in each panel shows the vacancy concentration profiles [in units of ] along the R interface for the selected values of .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hysteresis switching loops in Ag-manganite memristive interfaces