1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Analyzing real-time surface modification of operating semiconductor laser diodes using cross-sectional scanning tunneling microscopy
Rent:
Rent this article for
USD
10.1063/1.3380826
/content/aip/journal/jap/107/9/10.1063/1.3380826
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/9/10.1063/1.3380826
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of the DQW structure with (b) and (c) showing STM images across the device for an STM gap voltage and tunneling current of −3.5 V and 0.4 nA, with device currents of 0 A and 250 mA, respectively. (d) Shows stacked STM line plots across the structure for 0 A (solid line) and 250 mA (dashed line). Within each doping region the traces have been averaged, except for the active region, to show the relative tip height change between layers.

Image of FIG. 2.
FIG. 2.

(a) Schematic of the BHL structure with (b) and (c) showing STM images across the device for an STM gap voltage and tunneling current of and 0.8 nA, with device currents of 0 A before modification and 0 A after modification, respectively. (d) Shows stacked STM line plots across the structure, from bottom to top: 0 A before modification (solid), 35 mA during modification (dashed) and 0 A after modification (dotted). Within each doping region the traces have been averaged, except for the active region, to show the relative tip height change between layers.

Image of FIG. 3.
FIG. 3.

Modeled change in the height of the tip required to maintain constant tunneling current for the DQW p-type region (a) as the doping concentration reduces and (b) as the surface defect density increases. Dots show typical results, for contact , tip , and tip . The error bars show the extremes of variation in for other tunneling conditions. The height scale is the same for both plots to allow direct comparison.

Image of FIG. 4.
FIG. 4.

Modeled change in the height of the tip required to maintain constant tunneling current for the BHL p-type region (a) as the doping concentration reduces and (b) as the surface defect density increases. Dots show typical results, for contact , tip , and tip . The error bars show the extremes of variation in for other tunneling conditions. The height scale is the same for both plots to allow direct comparison.

Image of FIG. 5.
FIG. 5.

Modeled change in the height of the tip required to maintain constant tunneling current for the BHL n-type region (a) as the doping concentration reduces and (b) as the surface defect density increases. Dots show typical results, for contact , tip , and tip . The error bars show the extremes of variation in for other tunneling conditions. The height scale is the same for both plots to allow direct comparison.

Image of FIG. 6.
FIG. 6.

Band edge profile of a p-type InP sample imaged with positive gap voltage (a) with the standard parameters, (b) with a reduced doping concentration, (c) with an increase in the surface defect state density, and (d) with a reduced doping concentration and the tip-sample separation reduced from 1 to 0.8 nm. All are plotted on the same scale.

Loading

Article metrics loading...

/content/aip/journal/jap/107/9/10.1063/1.3380826
2010-05-10
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analyzing real-time surface modification of operating semiconductor laser diodes using cross-sectional scanning tunneling microscopy
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/9/10.1063/1.3380826
10.1063/1.3380826
SEARCH_EXPAND_ITEM