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Influence of 190 MeV ion irradiation on electrical transport and magnetic properties of ( and 0.4) thin films
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10.1063/1.3400036
/content/aip/journal/jap/107/9/10.1063/1.3400036
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/9/10.1063/1.3400036

Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of pristine and 190 MeV Ag ion irradiated (a) , and (b) thin films.

Image of FIG. 2.
FIG. 2.

Resistivity as function of temperature for pristine and 190 MeV Ag ion irradiated (a) and (b) thin films.

Image of FIG. 3.
FIG. 3.

Plots of vs of the resistivity data, the solid lines shows the calculated linear fit in the VRH model for pristine and 190 MeV Ag ion irradiated (a) and (b) thin films.

Image of FIG. 4.
FIG. 4.

The Magnetic hysteresis loops (in plane) for the pristine and 190 MeV Ag ion irradiated (a) and (b) thin films, at 300 K.

Tables

Generic image for table
Table I.

The lattice parameters, room temperature resistivity values, and saturation magnetization of the pristine and 190 MeV Ag ion irradiated (FN3) and (FN4) thin films.

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/content/aip/journal/jap/107/9/10.1063/1.3400036
2010-05-03
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of 190 MeV Ag+15 ion irradiation on electrical transport and magnetic properties of LaFe1−xNixO3 (x=0.3 and 0.4) thin films
http://aip.metastore.ingenta.com/content/aip/journal/jap/107/9/10.1063/1.3400036
10.1063/1.3400036
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