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Characterization of inclined GaSb nanopillars by Mueller matrix ellipsometry
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10.1063/1.3386460
/content/aip/journal/jap/108/1/10.1063/1.3386460
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/1/10.1063/1.3386460

Figures

Image of FIG. 1.
FIG. 1.

Sketch of the optical model, dependent on four parameters, the height , the bottom, and top relative diameters and , and the inclination angle .

Image of FIG. 2.
FIG. 2.

Cross section SEM image of nanopillars sputtered at 45° ion incidence, for 10 min exposure time.

Image of FIG. 3.
FIG. 3.

SEM images of nanopillars sputtered with 45° ion incidence, for various exposure times (10, 5, 4, and 2 min), taken at a 45° view angle.

Image of FIG. 4.
FIG. 4.

SEM images of nanopillars sputtered with various ion incidences (10°, 22.5°, and 60°), for 5 min ion exposure time, 45° view.

Image of FIG. 5.
FIG. 5.

Measured (dotted line) and simulated (solid line) Mueller matrix elements for sample 2, 3, and 5, prepared by sputtering for 5, 4, and 2 min at 45° ion incidence. This resulted in approximately 120, 60, and 35 nm high pillars, respectively. The measurements were performed at an azimuth orientation with the pillars inclined in a plane normal to the ellipsometric plane of incidence .

Image of FIG. 6.
FIG. 6.

Measurened (dots) and simulated (solid) Mueller matrix elements for sample 2 vs azimuth orientation , at a photon energy of 2.6 eV and 70° angle of incidence.

Image of FIG. 7.
FIG. 7.

(a) Experimental AR-MME measurements (532 nm) of sample 1. The 16 images represent polar plots of the 16 normalized Mueller elements. The polar coordinate represent the angle of incidence (, where is the angle of incidence), while the polar angle represents the azimuth sample orientation. A horizontal line through the center of the polar plots correspond to the pillars being inclined parallel to the plane of incidence, a vertical line through the center correspond to the pillars being inclined along a direction orthogonal to the plane of incidence. (b) Simulated angle resolved Mueller matrix, with parameters given for sample 1 in Table I.

Tables

Generic image for table
Table I.

Comparison of SEM characterization and parameters found by the effective medium fit to the spectroscopic Muller matrix measurements (MM16, 1.44–2.8 eV) at five azimuth orientations , at an angle of incidence 70°. Incl. denotes the angle of ion incidence during sputtering (set manually by rotating the sample holder), is the sputtering exposure time, is the pillar height determined from SEM images, , , and are the fitted parameters of the effective medium model, and is a measure of the goodness of fit. The height of this sample was obtained using AFM.

Generic image for table
Table II.

Comparison of SEM characterization and effective medium parameters found from fitting the optical model to spectroscopic measurements of two Mueller elements and at the azimuth orientation , with the inclination angle fixed to be equal to the angle of ion incidence. is the pillar height determined from SEM images, is the height found from fitting to multiple azimuth orientations (Table I), , and are the fitted parameters of the effective medium model, and is a measure of the goodness of fit. The height of this sample was obtained using AFM.

Generic image for table
Table III.

Comparison of SEM characterization and effective medium parameters found from fitting the optical model to angle resolved Mueller matrix measurements at a single wavelength of 532 nm. Incl. denotes the angle of ion incidence during sputtering (set manually by rotating the sample holder), is the sputtering exposure time, is the pillar height found from SEM images, , , , and are the fitted parameters of the effective medium model, and is a measure of the goodness of fit. The height of this sample was obtained using AFM.

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/content/aip/journal/jap/108/1/10.1063/1.3386460
2010-07-07
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization of inclined GaSb nanopillars by Mueller matrix ellipsometry
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/1/10.1063/1.3386460
10.1063/1.3386460
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