Evolution of the deposition rate using precursor at two substrate temperatures, (empty circles) and (filled squares).
Evolution of the crystallized layer thickness as a function of the annealing time at (a-Si film was deposited at using trisilane). The crystallization rate corresponds to the ratio .
TEM cross-section images of the as deposited a-Si layer. (a) gives an overall view of the layer and (b) is a high magnification image of the (111) facets at the a/c interface of the as-deposited sample.
TEM cross-section images of the film after partial crystallization ( and ). (a) Shows the complete structure with the c-Si part (bottom), the interface and the a-Si part (top); (b) gives a high magnification image of the a/c interface.
TEM cross-section image of the film after total crystallization ( and ). (a) Shows the morphology and the microstructure of the film. One can note the flatness of the surface and the absence of extended defects and clusters. (b) Typical SAD pattern of the film which exhibits only the  direction of the substrate; (c) and (d) are HR images of the top surface and of the film/substrate interface.
SIMS depth profile of boron distribution in the Si film after crystallization ( and ). There is a total incorporation of the nominal in the crystalline film (total absence of kinetic segregation).
Evolution of the ratio between the crystallization rates of a doped layer and an intrinsic layer as a function of boron concentration .
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