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Insights into solid phase epitaxy of ultrahighly doped silicon
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View: Figures


Image of FIG. 1.
FIG. 1.

Evolution of the deposition rate using precursor at two substrate temperatures, (empty circles) and (filled squares).

Image of FIG. 2.
FIG. 2.

Evolution of the crystallized layer thickness as a function of the annealing time at (a-Si film was deposited at using trisilane). The crystallization rate corresponds to the ratio .

Image of FIG. 3.
FIG. 3.

TEM cross-section images of the as deposited a-Si layer. (a) gives an overall view of the layer and (b) is a high magnification image of the (111) facets at the a/c interface of the as-deposited sample.

Image of FIG. 4.
FIG. 4.

TEM cross-section images of the film after partial crystallization ( and ). (a) Shows the complete structure with the c-Si part (bottom), the interface and the a-Si part (top); (b) gives a high magnification image of the a/c interface.

Image of FIG. 5.
FIG. 5.

TEM cross-section image of the film after total crystallization ( and ). (a) Shows the morphology and the microstructure of the film. One can note the flatness of the surface and the absence of extended defects and clusters. (b) Typical SAD pattern of the film which exhibits only the [110] direction of the substrate; (c) and (d) are HR images of the top surface and of the film/substrate interface.

Image of FIG. 6.
FIG. 6.

SIMS depth profile of boron distribution in the Si film after crystallization ( and ). There is a total incorporation of the nominal in the crystalline film (total absence of kinetic segregation).

Image of FIG. 7.
FIG. 7.

Evolution of the ratio between the crystallization rates of a doped layer and an intrinsic layer as a function of boron concentration .


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Insights into solid phase epitaxy of ultrahighly doped silicon