Schematic drawing of the device and two parallel surfaces were Gauss’s law is applied.
Schematic drawing of the three different models for recombination at the locally contacted rear surface; the drawings include the generation recombination condition used in the bulk and the boundary conditions used for each model. (a) Model from Fischer. (b) Model from Plagwitz and Brendel. (c) Model from this work. (d) Condition used for the numerical simulations.
Effective surface recombination velocity as a function of the distance between the centers of two contacts, calculated for a contact structure composed of lines. The model developed in this paper, i.e., Eq. (35), the model from Fischer and the model from Plagwitz and Brendel are compared with 2D finite element simulations. The surface recombination velocity at the contact is , the device thickness is , and the contact lines half-width is . The simulation parameters are: light excitation using the AM 1.5 spectrum, short-circuit conditions, industrial-type emitter (surface concentration of ), and a diffusion length of .
Summary of spreading-resistivity formula from literature (nonilluminated) for different contact geometries. Here, is the spreading resistance value in , denotes the radius or the half-width of the metallic contact, is the wafer thickness, is the half of the distance between the centers of two contacts, is the area dedicated to one contact, is the contact fraction, and is the conductance of the wafer in .
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