(a) Energy band diagram of the “W” type QW with the wave functions for electron and hole. Calculated contour plots of (b) emission wavelength and (c) electron-hole wave function overlap vs InGaAs (vertical axis) and GaAsSb (horizontal axis) layer thickness.
The structure of the designed “W” type QWs.
(a) PL spectra of samples in group A, B, C, and (b) integrated PL intensity (normalized at sample A1) plotted against the peak wavelength. The calculated result is plotted as the solid curve.
(a) Power dependence PL spectra of sample A1 and sample C1, and (b) the energy shifts vs along with the simulation results and the ideal curve for comparison. The inset shows the power dependence of the integrated PL intensity.
(a) PL peak wavelength vs temperature in sample A1, B1, B2, and B3. (b)Temperature dependence of the normalized integrated PL intensity (points) with the fitted Varshni curves.
The InGaAs/GaAsSb layer thickness, the BEP ratio, the summarized PL peak wavelength, and FWHM of the “W” type QW samples in group A, B, and C.
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