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mid infrared light sources using InGaAs/GaAsSb “W” type quantum wells on InP substrates
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10.1063/1.3506427
/content/aip/journal/jap/108/10/10.1063/1.3506427
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/10/10.1063/1.3506427

Figures

Image of FIG. 1.
FIG. 1.

(a) Energy band diagram of the “W” type QW with the wave functions for electron and hole. Calculated contour plots of (b) emission wavelength and (c) electron-hole wave function overlap vs InGaAs (vertical axis) and GaAsSb (horizontal axis) layer thickness.

Image of FIG. 2.
FIG. 2.

The structure of the designed “W” type QWs.

Image of FIG. 3.
FIG. 3.

(a) PL spectra of samples in group A, B, C, and (b) integrated PL intensity (normalized at sample A1) plotted against the peak wavelength. The calculated result is plotted as the solid curve.

Image of FIG. 4.
FIG. 4.

(a) Power dependence PL spectra of sample A1 and sample C1, and (b) the energy shifts vs along with the simulation results and the ideal curve for comparison. The inset shows the power dependence of the integrated PL intensity.

Image of FIG. 5.
FIG. 5.

(a) PL peak wavelength vs temperature in sample A1, B1, B2, and B3. (b)Temperature dependence of the normalized integrated PL intensity (points) with the fitted Varshni curves.

Tables

Generic image for table
Table I.

The InGaAs/GaAsSb layer thickness, the BEP ratio, the summarized PL peak wavelength, and FWHM of the “W” type QW samples in group A, B, and C.

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/content/aip/journal/jap/108/10/10.1063/1.3506427
2010-11-18
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 2–3 μm mid infrared light sources using InGaAs/GaAsSb “W” type quantum wells on InP substrates
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/10/10.1063/1.3506427
10.1063/1.3506427
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