1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Morphology and strain of self-assembled semipolar GaN quantum dots in AlN
Rent:
Rent this article for
USD
10.1063/1.3506686
/content/aip/journal/jap/108/10/10.1063/1.3506686
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/10/10.1063/1.3506686
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Bright-field CTEM image along the zone axis and (b) Z-contrast STEM image along of the overall GaN QD heterostructure of the 10 ML sample grown on semipolar AlN template. The heterostructure is perturbed by TDs, and depressions are observed at the GaN/AlN interface.

Image of FIG. 2.
FIG. 2.

Plan-view Z-contrast STEM images along , obtained from the 5 ML sample, showing GaN QDs with rectangular and trapezoidal-like projected shapes. The orientation of the in-plane axis is indicated, and dotted lines have been drawn around some QDs to aid the eye regarding shape determination.

Image of FIG. 3.
FIG. 3.

RHEED patterns with the electron beam (a) along the and (b) azimuths. Extra spots in the patterns correspond to the QD lateral facets, i.e., in (a), and the crystallographically equivalent facets, in (b).

Image of FIG. 4.
FIG. 4.

Cross sectional HRTEM image of GaN QDs in the 10 ML sample, observed along . The facets indicated by solid lines are of type.

Image of FIG. 5.
FIG. 5.

Cross sectional HRTEM image of GaN QDs in the 10 ML sample, observed along . The side facets are indicated by solid lines. The dashed lines indicate facets of average orientation or .

Image of FIG. 6.
FIG. 6.

Schematic illustration, along three perpendicular projection directions, of the two delimiting QD morphologies of the -nucleated QDs. The orientation of the glide mirror plane is indicated.

Image of FIG. 7.
FIG. 7.

(a) Z-contrast STEM image showing QDs nucleated at facet junctions. (b) High resolution STEM image of one of the QDs depicted in (a). The fringes corresponding to the basal planes are seen to be vertical to the facets indicated by white solid lines.

Image of FIG. 8.
FIG. 8.

(a) Cross-sectional weak-beam CTEM image of the 10 ML sample obtained off the zone axis using 0002. Inclined TDs are discernible as well as a row of QDs stacked along the basal plane and indicated by an arrow. Other arrows indicate TDs that appear to be associated with this row of QDs. (b) Cross sectional HRTEM image of the 5 ML sample, obtained along , and showing a region with at least two ascending TDs, indicated by dotted lines. The region is seen to comprise facets where QDs have nucleated. The orientation of the planes is indicated by solid white lines. The WL between the QDs is also well-resolved, as indicated by arrows.

Image of FIG. 9.
FIG. 9.

(a) Cross sectional HRTEM image of a -nucleated QD observed along . (b) Corresponding lattice strain map along the growth direction obtained with 0.71 nm spatial resolution ( mask size). (c) FFT of the HRTEM image of (a). The spatial frequencies employed for the GPA strain analysis are indicated. (d) Lattice strain profile along the growth direction. The profile was obtained using 6 nm integration width from the area indicated in (b). The spatial resolution for the particular profile was 0.95 nm ( mask size), and the accuracy of strain determination was 0.4%.

Image of FIG. 10.
FIG. 10.

In (a), the FE mesh is shown superimposed on the proposed QD geometry. The capping layer has been removed for illustrative purposes only. In (b) and (c), the elastic strain distribution is presented in 2D projected contour plots of a QD cross-section through the - and -planes, respectively. In (d) and (e), the corresponding distributions of the electrostatic potential (in volt) are presented in 2D projected contour plots.

Image of FIG. 11.
FIG. 11.

Quantification of the results of the FE analysis for a cross section through the center of the QD on the -plane [i.e., ]. In (a) and (b), the elastic and lattice normal strain components are given as a function of position along the growth -axis. In (c), the variation in the electrostatic potential with position along the -axis is given.

Image of FIG. 12.
FIG. 12.

Schematic illustration of the relaxed simulated and interfaces projected along . Shading denotes distinct levels along the projection direction. .

Loading

Article metrics loading...

/content/aip/journal/jap/108/10/10.1063/1.3506686
2010-11-17
2014-04-16
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Morphology and strain of self-assembled semipolar GaN quantum dots in (112¯2) AlN
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/10/10.1063/1.3506686
10.1063/1.3506686
SEARCH_EXPAND_ITEM