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Modeling and performance analysis of GaN nanowire field-effect transistors and band-to-band tunneling field-effect transistors
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10.1063/1.3510502
/content/aip/journal/jap/108/10/10.1063/1.3510502
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/10/10.1063/1.3510502
/content/aip/journal/jap/108/10/10.1063/1.3510502
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/content/aip/journal/jap/108/10/10.1063/1.3510502
2010-11-17
2014-12-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Modeling and performance analysis of GaN nanowire field-effect transistors and band-to-band tunneling field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/10/10.1063/1.3510502
10.1063/1.3510502
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