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Electrical resistivity of nanocrystalline Al-doped zinc oxide films as a function of Al content and the degree of its segregation at the grain boundaries
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10.1063/1.3511346
/content/aip/journal/jap/108/10/10.1063/1.3511346
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/10/10.1063/1.3511346

Figures

Image of FIG. 1.
FIG. 1.

(a) XRD patterns of AZO films as a function of the doping level. (i)–(ix) stand for pure ZnO to a maximum of AZO, with an increment of of Al, respectively, (b) shows the crystallite size of Al:ZnO films calculated using Scherrer’ equation.

Image of FIG. 2.
FIG. 2.

[(a)–(c)] SEM micrographs of AZO thin films with different heat ramping during drying of the gel, (a) SHR, (b) MHR, (c) FHR, respectively, (d) cross sectional SEM image of a sample prepared with MHR.

Image of FIG. 3.
FIG. 3.

[(a) and (b)] High resolution bright field TEM images of AZO films.

Image of FIG. 4.
FIG. 4.

TEM images of AZO films with selected area EDX measurement (the EDX result is shown as inset in each image). (a) and 4(b) are taken on and (c) and (d) on doped ZnO films. In case of (a) and (c) deliberately an area on single particle is chosen; in case of (b) and (d) intentionally areas with multiple particles and many grain boundaries are selected.

Image of FIG. 5.
FIG. 5.

Electrical resistivity variation in Al:ZnO films prepared with MHR preheat treatment, as a function of doping level.

Image of FIG. 6.
FIG. 6.

(a) Optical transmission spectra of undoped and doped ZnO films and (b) plots of against photon energy . The energy gap was obtained by extrapolating the linear part.

Image of FIG. 7.
FIG. 7.

IR spectroscopy measurement of pure and AZO thin films showing the resonance absorption of the plasma frequency for the doped ones.

Tables

Generic image for table
Table I.

Al concentration obtained from the TEM-EDX measurement for the 2 and AZO films.

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/content/aip/journal/jap/108/10/10.1063/1.3511346
2010-11-30
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical resistivity of nanocrystalline Al-doped zinc oxide films as a function of Al content and the degree of its segregation at the grain boundaries
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/10/10.1063/1.3511346
10.1063/1.3511346
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