A schematic of the processes changing the electronic distribution in the CB. The -axis is the electron energy scale divided into the VB and the CB. The dashed arrows indicate electron energy increase due to photoabsorptions (both, photoexcitation from the VB to the CB, and sequential photoabsorptions within the CB). The dashed-dotted arrows show impact ionization processes in which two electrons are involved (excitation of an electron from the VB to the CB by impact of an electron from the CB). The dotted arrows are used to mark Auger-process: one electron falls down from the CB to the VB, while a second electron gains the energy within the CB. The solid arrows between the neighboring energy steps show the process of phonon emission.
Cross-section of impact ionization according to Eq. (9) (Refs. 53–55). Parameters of a silicon target are applied.
The total electron-phonon scattering rate of Si, extracted from the Refs. 45 and 46.
The total density of free electrons during and after irradiation of the solid Si target for different fluences of irradiation.
Density of free electrons during and after the irradiation of solid Si target caused by different ionization mechanisms. Two different fluences of irradiation are considered.
The change in the reflectivity as a function of time for different fluences. Curves are shown up to the melting of the material.
The reflectivity as a function of fluence for two different times after the irradiation. The squares and circles are experimental data from Ref. 1. The lines are the results of the presented calculations.
The lattice temperature during and after the irradiation of silicon for different fluences of irradiation.
The total density of absorbed photons by free electrons during the irradiation of a solid Si target for different fluences of irradiation with visible light of 625 nm.
The indices used in Fig. 1 and the Eq. (1). The discrete index corresponds to the energy described in the column ‘meaning’
A comparison of the calculated and experimentally measured damage threshold fluence of silicon for two different irradiation wavelengths (, nm). The experimental data were collected from the references cited within the table.
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