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A comprehensive model for the ultrashort visible light irradiation of semiconductors
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10.1063/1.3511455
/content/aip/journal/jap/108/10/10.1063/1.3511455
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/10/10.1063/1.3511455

Figures

Image of FIG. 1.
FIG. 1.

A schematic of the processes changing the electronic distribution in the CB. The -axis is the electron energy scale divided into the VB and the CB. The dashed arrows indicate electron energy increase due to photoabsorptions (both, photoexcitation from the VB to the CB, and sequential photoabsorptions within the CB). The dashed-dotted arrows show impact ionization processes in which two electrons are involved (excitation of an electron from the VB to the CB by impact of an electron from the CB). The dotted arrows are used to mark Auger-process: one electron falls down from the CB to the VB, while a second electron gains the energy within the CB. The solid arrows between the neighboring energy steps show the process of phonon emission.

Image of FIG. 2.
FIG. 2.

Cross-section of impact ionization according to Eq. (9) (Refs. 53–55). Parameters of a silicon target are applied.

Image of FIG. 3.
FIG. 3.

The total electron-phonon scattering rate of Si, extracted from the Refs. 45 and 46.

Image of FIG. 4.
FIG. 4.

The total density of free electrons during and after irradiation of the solid Si target for different fluences of irradiation.

Image of FIG. 5.
FIG. 5.

Density of free electrons during and after the irradiation of solid Si target caused by different ionization mechanisms. Two different fluences of irradiation are considered.

Image of FIG. 6.
FIG. 6.

The change in the reflectivity as a function of time for different fluences. Curves are shown up to the melting of the material.

Image of FIG. 7.
FIG. 7.

The reflectivity as a function of fluence for two different times after the irradiation. The squares and circles are experimental data from Ref. 1. The lines are the results of the presented calculations.

Image of FIG. 8.
FIG. 8.

The lattice temperature during and after the irradiation of silicon for different fluences of irradiation.

Image of FIG. 9.
FIG. 9.

The total density of absorbed photons by free electrons during the irradiation of a solid Si target for different fluences of irradiation with visible light of 625 nm.

Tables

Generic image for table
Table I.

The indices used in Fig. 1 and the Eq. (1). The discrete index corresponds to the energy described in the column ‘meaning’

Generic image for table
Table II.

A comparison of the calculated and experimentally measured damage threshold fluence of silicon for two different irradiation wavelengths (, nm). The experimental data were collected from the references cited within the table.

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/content/aip/journal/jap/108/10/10.1063/1.3511455
2010-11-22
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A comprehensive model for the ultrashort visible light irradiation of semiconductors
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/10/10.1063/1.3511455
10.1063/1.3511455
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