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Physical origins of mobility enhancement of Ge p-channel metal-insulator-semiconductor field effect transistors with Si passivation layers
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10.1063/1.3512868
/content/aip/journal/jap/108/10/10.1063/1.3512868
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/10/10.1063/1.3512868
/content/aip/journal/jap/108/10/10.1063/1.3512868
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/content/aip/journal/jap/108/10/10.1063/1.3512868
2010-11-23
2014-07-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Physical origins of mobility enhancement of Ge p-channel metal-insulator-semiconductor field effect transistors with Si passivation layers
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/10/10.1063/1.3512868
10.1063/1.3512868
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