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Physical origins of mobility enhancement of Ge p-channel metal-insulator-semiconductor field effect transistors with Si passivation layers
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10.1063/1.3512868
/content/aip/journal/jap/108/10/10.1063/1.3512868
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/10/10.1063/1.3512868
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Device structure of a Ge p-MISFET with a Si PL and NiGe metal source and drain.

Image of FIG. 2.
FIG. 2.

TEM images of (a) a interface without a Si PL, (b) and (c) interfaces in the and devices, respectively.

Image of FIG. 3.
FIG. 3.

rms surface roughness of the Si PLs as a function of the Si PL thickness obtained by AFM measurement.

Image of FIG. 4.
FIG. 4.

Comparison of the simulated and measured curves of the , , and devices.

Image of FIG. 5.
FIG. 5.

(a) Depth profiles of Ge content evaluated by fitting the measured curve to the simulated one for devices. (b) Depth profiles of energy near valence band edges evaluated by fitting the measured curve to the simulated one for devices. Here, . (c) Depth profiles of hole concentration evaluated by fitting the measured curve to the simulated one for devices. Here, .

Image of FIG. 6.
FIG. 6.

Hole mobilities measured at room temperature for (a) and (b) devices with various , respectively.

Image of FIG. 7.
FIG. 7.

Mobilities of the devices measured at various temperatures.

Image of FIG. 8.
FIG. 8.

Comparison among the mobilities of devices with various measured at around 80 K.

Image of FIG. 9.
FIG. 9.

Mobility limited by the phonon scattering evaluated at various temperatures for the device.

Image of FIG. 10.
FIG. 10.

Temperature dependence of for the and devices.

Image of FIG. 11.
FIG. 11.

Mobility limited by Coulomb scattering at 300 K of the devices with various as function of . The solid line indicates the proportional relationship between and .

Image of FIG. 12.
FIG. 12.

and evaluated at the surface potential of as a function of the Si PL thickness, where is the midgap of germanium (Ref. 28). This result is evaluated from the capacitors with p-type substrates in order to measure and in the lower half of the bandgap.

Image of FIG. 13.
FIG. 13.

Relationship between at and evaluated from the conductance method.

Image of FIG. 14.
FIG. 14.

Schematic illustration of the mobility enhancement mechanisms of the Ge p-MISFET with Si PL.

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/content/aip/journal/jap/108/10/10.1063/1.3512868
2010-11-23
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Physical origins of mobility enhancement of Ge p-channel metal-insulator-semiconductor field effect transistors with Si passivation layers
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/10/10.1063/1.3512868
10.1063/1.3512868
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