Device structure of a Ge p-MISFET with a Si PL and NiGe metal source and drain.
TEM images of (a) a interface without a Si PL, (b) and (c) interfaces in the and devices, respectively.
rms surface roughness of the Si PLs as a function of the Si PL thickness obtained by AFM measurement.
Comparison of the simulated and measured curves of the , , and devices.
(a) Depth profiles of Ge content evaluated by fitting the measured curve to the simulated one for devices. (b) Depth profiles of energy near valence band edges evaluated by fitting the measured curve to the simulated one for devices. Here, . (c) Depth profiles of hole concentration evaluated by fitting the measured curve to the simulated one for devices. Here, .
Hole mobilities measured at room temperature for (a) and (b) devices with various , respectively.
Mobilities of the devices measured at various temperatures.
Comparison among the mobilities of devices with various measured at around 80 K.
Mobility limited by the phonon scattering evaluated at various temperatures for the device.
Temperature dependence of for the and devices.
Mobility limited by Coulomb scattering at 300 K of the devices with various as function of . The solid line indicates the proportional relationship between and .
and evaluated at the surface potential of as a function of the Si PL thickness, where is the midgap of germanium (Ref. 28). This result is evaluated from the capacitors with p-type substrates in order to measure and in the lower half of the bandgap.
Relationship between at and evaluated from the conductance method.
Schematic illustration of the mobility enhancement mechanisms of the Ge p-MISFET with Si PL.
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