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Impact of surface topography and laser pulse duration for laser ablation of solar cell front side passivating layers
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10.1063/1.3493204
/content/aip/journal/jap/108/11/10.1063/1.3493204
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/11/10.1063/1.3493204
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross sectional schemes of the laser treated diodes. The emitter passiviating layer is removed on 4% area fraction by laser ablation or wet chemical etching.

Image of FIG. 2.
FIG. 2.

(a) SEM image of a ps laser spot after ablation (top view). This sample was used for TEM investigations (Fig. 3 ). In order to protect surface-near regions against ion damage during FIB preparation, a Pt:C layer is deposited at the area of interest. The white arrow marks the position of the lamella, which is excavated by FIB technology. (b) SEM image of a spot caused by the same laser on textures Si surface (cross section, slightly tilted). Ripple structures are clearly visible. (c) SEM image of another textured sample treated by the same laser. The areas of ablated in this image are marked by a transparent orange coloring. This sample was used for TEM investigations. The deposited Pt:C layer is marked by green coloring and shows the position of the later TEM lamella.

Image of FIG. 3.
FIG. 3.

(a) STEM-EDX signals of a cross sectional TEM lamella at the boundary of a ps laser spot after ablation on a planar Si wafer. (b) TEM image of the cross section of a ps laser spot surface. The position of the investigated area in the laser spot is marked by the white arrow in Fig. 2(a) and by the white frame in (a). Left side of the image: boundary of the laser spot; right side: toward the center of the laser spot. Dark contrasts toward the spot center indicate crystal damage. (c) Enlargement with an image detail of the dark contrasts in the TEM image by means of HRTEM. In the magnification the contrasts visible in (b) can be identified as amorphous silicon.

Image of FIG. 4.
FIG. 4.

(a). TEM images of the cross section of a texture pyramid after ablation by a single ps laser pulse . (a) The surface of the left hand side side wall of the pyramid. Dislocations are clearly visible, running perpendicular to the side walls surface. (b) The apex of the pyramid. Vertical dislocations can be observed.

Image of FIG. 5.
FIG. 5.

Measured dark curves of laser treated diodes (non-square symbols) in direct comparison to a wet chemically treated diode (square symbols). A schematic cross section of the diodes is shown in the graph. Local emitter contact openings on 4% area fraction on the planar emitter side are realized by various laser technologies in the ns- to fs-range (see legend) and by inkjet technology plus selective HF etching (HF-reference). The abbreviation ft stands for flat-top beam profile.

Image of FIG. 6.
FIG. 6.

(a). Measured dark curves of laser treated diodes (non-square symbols) in direct comparison to a wet chemically treated diode (square symbols). A schematic cross section of the diodes is shown in the graph. The local emitter contact openings on 4% area fraction on the textured emitter side were realized by various laser technologies in the ns- to fs-range (see legend) and by inkjet technology plus selective HF etching (HF-reference). The abbreviation ft stands for flat-top beam profile.

Image of FIG. 7.
FIG. 7.

Local emitter saturation current densities in laser ablated areas after ns (triangle symbols) and ps (inverted triangle symbols) laser ablation of a layer. Reference values for wet chemically treated samples are also displayed (square symbols).

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/content/aip/journal/jap/108/11/10.1063/1.3493204
2010-12-13
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of surface topography and laser pulse duration for laser ablation of solar cell front side passivating SiNx layers
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/11/10.1063/1.3493204
10.1063/1.3493204
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