Schematic diagram of the ICP system.
(a) Raman spectra of the films deposited at varied inductive rf power density. (b) Schematic fitting for the decomposition of Raman scattering spectra. (c) Raman crystalline fraction and deposition rate as functions of the inductive rf power density.
XRD patterns of the Si:H films deposited at different inductive rf power densities.
A typical plain view (a) and the corresponding cross-section view (b) of the film deposited at an inductive rf power density of . (c) The surface morphology of the film with an intermediate phase between microcrystalline and a-Si deposited at a power density of . (d) The surface morphology of the a-Si:H film deposited at a power density of .
QMS spectra for (a) basic vacuum chamber and (b) the discharge at an inductively coupled power density of . The internal ionizer of the QMS was turned off when the ICP chamber was being discharging.
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