1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Systematic study of the effect of incorporation on the flatband voltage and Si band bending in the stack
Rent:
Rent this article for
USD
10.1063/1.3516483
/content/aip/journal/jap/108/11/10.1063/1.3516483
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/11/10.1063/1.3516483
/content/aip/journal/jap/108/11/10.1063/1.3516483
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/jap/108/11/10.1063/1.3516483
2010-12-09
2014-12-28
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Systematic study of the effect of La2O3 incorporation on the flatband voltage and Si band bending in the TiN/HfO2/SiO2/p-Si stack
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/11/10.1063/1.3516483
10.1063/1.3516483
SEARCH_EXPAND_ITEM