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Growth and characterization of iron-doped semi-insulating InP buffer layers for Al-free GaInP/GaInAs high electron mobility transistors
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10.1063/1.3516490
/content/aip/journal/jap/108/11/10.1063/1.3516490
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/11/10.1063/1.3516490
/content/aip/journal/jap/108/11/10.1063/1.3516490
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/content/aip/journal/jap/108/11/10.1063/1.3516490
2010-12-06
2014-07-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth and characterization of iron-doped semi-insulating InP buffer layers for Al-free GaInP/GaInAs high electron mobility transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/11/10.1063/1.3516490
10.1063/1.3516490
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