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Growth and characterization of iron-doped semi-insulating InP buffer layers for Al-free GaInP/GaInAs high electron mobility transistors
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10.1063/1.3516490
/content/aip/journal/jap/108/11/10.1063/1.3516490
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/11/10.1063/1.3516490
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

electron concentration vs etched depth for different n.i.d. InP buffer layers. The growth performed previous to the buffer layers deposition is labeled for each sample. The electron density peaks at the buffer/substrate interface.

Image of FIG. 2.
FIG. 2.

Fe and Si concentration profiles from SIMS in an InP buffer layer deposited at . The Si concentration peak corresponds to the buffer/substrate interface.

Image of FIG. 3.
FIG. 3.

SIMS Fe and Si concentrations versus thickness in a HEMT structure. The buffer layer consists of 90 nm, the first 320 nm of which were doped with Fe.

Image of FIG. 4.
FIG. 4.

(a) Numerical simulation of the equilibrium band diagram and electron density in HEMT structure. No impurities were added to the InP buffer layer. (b) Numerical simulation of the equilibrium band diagram and electron density in HEMT structures. An n-type doping impurity profile was included to the buffer layer, so that the simulated electron density approaches the one in Fig. 1(a). (c) Numerical simulation of the equilibrium band diagram and electron density in HEMT structures. Beside the n-type impurities described in Fig. 4(b), also a concentration of Fe of was added to the first 302 nm of the InP buffer layer, followed by the Fe doping tail shown in Fig. 3. (d) Numerical simulation of the equilibrium band diagram and electron density of HEMT structure. Compared to the HEMT structure in Fig. 4(c), the thickness of the In:Fe buffer and the n.i.d. InP buffer were reduced from 300 nm to 100 nm and from 660 nm to 540 nm, respectively, leading to a total buffer layer thickness of 640 nm instead of 980 nm.

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/content/aip/journal/jap/108/11/10.1063/1.3516490
2010-12-06
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth and characterization of iron-doped semi-insulating InP buffer layers for Al-free GaInP/GaInAs high electron mobility transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/11/10.1063/1.3516490
10.1063/1.3516490
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