SEM image of a Ge sample implanted with 50 keV Sb, , at the .
Depth over which the implanted Sb (50 keV, at and then amorphized) redistributes under laser irradiation as a function of the number of subsequent laser pulses, repeated with a frequency of 1 Hz (open circles), and the correspondent Sb fluence present in the sample obtained by r-RBS (closed circles).
r- and c-RBS spectra along the and axes (continuous and dashed lines, respectively) in the sample implanted with Sb 50 keV, at , amorphized and then irradiated with five pulses at . Panels (a) and (c) report the Ge signal and panels (b) and (d) the Sb one in different samples (where the correspondent depth scale of the Sb profile is also plotted). Dotted lines in panels (a) and (c) are the spectra along the and axes in a Ge single crystal, reported as a reference.
Schematic of the experiment in the GeOI sample performed by low-T MBE GeSb deposition and following laser irradiation.
(004) RCs of the GeOI sample lasered with five subsequent pulses at (line plus open circles) and further thermally annealed up to (line plus open triangles) and up to (lines plus open squares). The RC of a pure c-Ge sample (line plus closed circles) is also plotted as a reference.
Relaxed lattice parameter of the alloy obtained by the analysis of the RCs collected in situ during the linear temperature ramp. On the left is plotted the correspondent substitutional Sb concentration, related to by the Vegard’s law.
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