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Continuous-wave laser annealing of Si-rich oxide: A microscopic picture of macroscopic phase separation
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10.1063/1.3520673
/content/aip/journal/jap/108/12/10.1063/1.3520673
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/12/10.1063/1.3520673
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Figures

Image of FIG. 1.
FIG. 1.

(a) Optical microscope photograph and (b) Raman map of the Si-nc band. The free-standing film was irradiated by 488 nm light through a 150 mm lens. In the optical photograph, the sample was illuminated through the objective. The oval shape is due to a nonperpendicular direction of the annealing laser beam. Lighter regions in the Raman map correspond to stronger Raman signals. The Raman signal was integrated in the 510 to spectral range.

Image of FIG. 2.
FIG. 2.

(a) Raman spectra of a laser-annealed film from regions in the center (in), on the ring (on), and outside the laser-annealed area (out). (b) PL spectrum outside the laser-annealed area; the PL signal is absent from regions in the center and on the ring (multiplied by 10 for better visibility). (c) Raman (open circles), PL (stars), and transmission (triangles) cross-sections of the laser-annealed area. The cross-sections were measured in the vertical direction for the sample shown in Fig. 1.

Image of FIG. 3.
FIG. 3.

Ring diameters for different laser-annealed areas obtained from optical microscope photographs and Raman profiles. A -thick free-standing film was irradiated by through a 10× objective of the Raman microscope. A photograph of the measured spots is shown above the graph. The diameters were obtained for the middle of the ring. The arrow marks the spot studied in detail by TEM.

Image of FIG. 4.
FIG. 4.

EELS spectra. Regions A, B, and C are located at , , and from the center of the laser-annealed area, respectively. The measured laser-annealed area is marked by an arrow in the photograph in Fig. 3.

Image of FIG. 5.
FIG. 5.

EFTEM images of regions A, B, and C displaced by , , and from the spot center, respectively. The measured laser-annealed area is marked by an arrow in the photograph in Fig. 3.

Image of FIG. 6.
FIG. 6.

FTIR spectra of a -thick free-standing film. (a) Spectrum measured from a 1 mm spot. (b) Spectra measured by a FTIR microscope (from top to bottom) in the center (in), on the ring (on), and outside the laser-annealed area (out).

Image of FIG. 7.
FIG. 7.

XPS spectra of a -thick free-standing film measured in the center (in), on the ring (on), and outside the laser-annealed area (out). The energy scale is calibrated using the binding energy of Si in . Five spectra measured in depths from 100 to 300 nm are averaged.

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/content/aip/journal/jap/108/12/10.1063/1.3520673
2010-12-17
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Continuous-wave laser annealing of Si-rich oxide: A microscopic picture of macroscopic SiSiO2 phase separation
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/12/10.1063/1.3520673
10.1063/1.3520673
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