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Fast and slow carrier recombination transients in highly excited 4H– and 3C–SiC crystals at room temperature
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10.1063/1.3459894
/content/aip/journal/jap/108/2/10.1063/1.3459894
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/2/10.1063/1.3459894
/content/aip/journal/jap/108/2/10.1063/1.3459894
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/content/aip/journal/jap/108/2/10.1063/1.3459894
2010-07-27
2014-09-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fast and slow carrier recombination transients in highly excited 4H– and 3C–SiC crystals at room temperature
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/2/10.1063/1.3459894
10.1063/1.3459894
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