1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Fast and slow carrier recombination transients in highly excited 4H– and 3C–SiC crystals at room temperature
Rent:
Rent this article for
USD
10.1063/1.3459894
/content/aip/journal/jap/108/2/10.1063/1.3459894
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/2/10.1063/1.3459894

Figures

Image of FIG. 1.
FIG. 1.

Experimental setup for measurements of fast and slow FCA decay transients.

Image of FIG. 2.
FIG. 2.

The calculated surface recombination time for different epilayer thicknesses and varying and values.

Image of FIG. 3.
FIG. 3.

Numerical calculations of carrier density profile evolution in thick 4H–SiC epilayer at 355 nm (a) and 266 nm (b) excitation. Excitation fluence of and correspond to injection level of (a) and (b), respectively. For modeling, typical 4H–SiC parameters were used: , , , (Ref. 1) and (Ref. 4). Note that different excitation energy fluence in (a) and (b) is required to get similar injection levels at epilayer surface (in accordance with the absorption coefficients at the wavelengths employed, see Table I).

Image of FIG. 4.
FIG. 4.

Calculated carrier density profiles in the thick 4H–SiC epilayer at 355 nm (a) and 266 nm (b) excitation; , , , , and . Excitation fluencies and correspond to injection levels (a) and (b).

Image of FIG. 5.
FIG. 5.

Calculated FCA signal decay in 4H–SiC at low and high carrier densities, when carriers are injected by 25 ps duration laser pulse either at 355 or 266 nm wavelength. Here injection level corresponds to carrier density near the excited surface after photoexcitation. The recombination parameters are: , , , . The dashed lines are the fitted exponential decay curves in semilogarithmic plot, exhibiting the determined decay times.

Image of FIG. 6.
FIG. 6.

Calibration plots for FCA cross section value at 1064 nm in 4H– and 3C–SiC using 355 nm excitation.

Image of FIG. 7.
FIG. 7.

FCA kinetics (points) in a thick 4H–SiC epitaxial layer at various excitation energy fluencies at 351 nm (a) or 263 nm (b). Numerical fitting is shown by lines, using the parameters given on the plot. Excitation energy fluence of corresponds to injection level of excess carrier density equal to (a) and (b) at the epilayer surface.

Image of FIG. 8.
FIG. 8.

FCA kinetics in a thick 4H–SiC epitaxial layer at various excitation energy fluencies and wavelengths: 351 nm (a) or 263 nm (b) (points). Numerical modeling is shown by lines, using the parameters given on the plot. Excitation energy fluence of corresponds to injection levels equal to (a) and (b) at the epilayer surface.

Image of FIG. 9.
FIG. 9.

FCA decay kinetics in a thin 4H–SiC layer at 263 nm excitation (a) and dependence of the nonlinear recombination rate on carrier density (b). Here is the initial decay time of FCA decay obtained from the initial slope of the decay curve on a semilogarthmic plot, while is the initial decay time at the lowest injection level used. In (b) is the slope of the log-log plot. Excitation energy fluence of corresponds to injection level at the layer surface.

Image of FIG. 10.
FIG. 10.

FCA kinetics in a thick 3C–SiC epitaxial layer at various excitation energy fluencies for 351 nm excitation. is the fitted exponential decay time, assuming condition . Excitation energy fluence of corresponds to excess carrier density at the surface.

Image of FIG. 11.
FIG. 11.

Fast component of FCA decay in 3C–SiC at 351 nm excitation (a) and nonlinear recombination rate dependence on carrier density (b). Excitation energy fluence of corresponds to excess carrier density at the surface. The maximum carrier density of was achieved.

Tables

Generic image for table
Table I.

SiC absorption coefficients at RT.

Generic image for table
Table II.

Recombination parameters of SiC at 298 K.

Loading

Article metrics loading...

/content/aip/journal/jap/108/2/10.1063/1.3459894
2010-07-27
2014-04-25
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fast and slow carrier recombination transients in highly excited 4H– and 3C–SiC crystals at room temperature
http://aip.metastore.ingenta.com/content/aip/journal/jap/108/2/10.1063/1.3459894
10.1063/1.3459894
SEARCH_EXPAND_ITEM