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Dynamics of polarized photoluminescence in -plane InGaN/GaN quantum wells
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View: Figures


Image of FIG. 1.
FIG. 1.

PL spectra for samples A (a) and B (b) integrated within 50 ps spectral windows at 25 and 325 ps central times after the excitation for and polarizations. Note multiplication factors for the spectra. The inset to (a) shows band structure and polarizations for the band gap transitions for a compressively strained InGaN layer grown on -plane GaN.

Image of FIG. 2.
FIG. 2.

Spectrally-integrated PL transients for the sample A for (several temperatures) and polarizations for low excitation power density.

Image of FIG. 3.
FIG. 3.

Arrhenius plots for the short decay times for the samples A and B.

Image of FIG. 4.
FIG. 4.

PL transients for the sample A for polarization measured at high excitation power density.

Image of FIG. 5.
FIG. 5.

Temporal transients measured at different parts of the PL peak for sample A at 200 K for polarization. The smooth curve presents calculation results.

Image of FIG. 6.
FIG. 6.

Temporal change of the PL peak position for samples A (a) and B (b) at various temperatures for excitation power density.

Image of FIG. 7.
FIG. 7.

Schematics of 1D diffusion model and calculated temporal evolution of free exciton distribution along the selected axis.

Image of FIG. 8.
FIG. 8.

Temporal change of the polarization degree for sample A at three different temperatures. The inset shows normalized room temperature PL intensities for samples A and B as a function of the analyzer angle.

Image of FIG. 9.
FIG. 9.

Schematics of processes leading to reduced degree of PL polarization: (a) filling of the second valence band level; (b) localization at potential minima of the first valence band level with reduced degree of polarization.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dynamics of polarized photoluminescence in m-plane InGaN/GaN quantum wells