PL spectra for samples A (a) and B (b) integrated within 50 ps spectral windows at 25 and 325 ps central times after the excitation for and polarizations. Note multiplication factors for the spectra. The inset to (a) shows band structure and polarizations for the band gap transitions for a compressively strained InGaN layer grown on -plane GaN.
Spectrally-integrated PL transients for the sample A for (several temperatures) and polarizations for low excitation power density.
Arrhenius plots for the short decay times for the samples A and B.
PL transients for the sample A for polarization measured at high excitation power density.
Temporal transients measured at different parts of the PL peak for sample A at 200 K for polarization. The smooth curve presents calculation results.
Temporal change of the PL peak position for samples A (a) and B (b) at various temperatures for excitation power density.
Schematics of 1D diffusion model and calculated temporal evolution of free exciton distribution along the selected axis.
Temporal change of the polarization degree for sample A at three different temperatures. The inset shows normalized room temperature PL intensities for samples A and B as a function of the analyzer angle.
Schematics of processes leading to reduced degree of PL polarization: (a) filling of the second valence band level; (b) localization at potential minima of the first valence band level with reduced degree of polarization.
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